AbstractThin films of AIN and GaN were deposited on α(6H)-SiC(0001) wafers using metalorganic vapor phase epitaxy (MOVPE) and H2 and N2 diluents. A computational fluid dynamic model of the deposition process was used to analyze the film growth conditions for both diluents. Low temperature (12 K) photoluminescence of the GaN films grown in N2 had peak intensities and full widths at half maximum of ∼7 meV which were equal to or better than those films grown in H2. Cross-sectional and plan-view transmission electron microscopy of films grown in both diluents showed similar microstructures with a typical dislocation density of 109/cm2. Hall measurements of n-type (Si doped) GaN grown in N2 revealed Hall mobilities equivalent to those films grown in H2. Acceptor-type behavior of Mg-doped GaN grown in N2 was repeatably obtained without post-growth annealing. Secondary ion mass spectrometry revealed equivalent levels of H in Mg-doped GaN films grown in both diluents.
Electrical characterization of Mg‐doped GaN grown by metalorganic vapor phase epitaxy