Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

1995 ◽  
Vol 150 ◽  
pp. 1015-1019 ◽  
Author(s):  
J. Zhang ◽  
A.G. Taylor ◽  
J.M. Fernández ◽  
B.A. Joyce ◽  
A.R. Turner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
Molecular Beam Epitaxy Growth ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Reflectance Anisotropy ◽  
Gas Source

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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