Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
1985 ◽
Vol 3
(5)
◽
pp. 1317
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1995 ◽
Vol 150
◽
pp. 1015-1019
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1989 ◽
Vol 40
(17)
◽
pp. 11799-11803
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1994 ◽
Vol 137
(1-2)
◽
pp. 187-194
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Keyword(s):
1996 ◽
Vol 35
(Part 2, No. 3B)
◽
pp. L366-L369
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1997 ◽
Vol 36
(Part 1, No. 5A)
◽
pp. 2813-2816
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Keyword(s):