Real Time Observation of Reflectance Anisotropy and Reflection High-Energy Electron Diffraction Intensity Oscillations During Gas-Source Molecular-Beam-Epitaxy Growth of Si and SiGe on Si(001)

1995 ◽  
Vol 74 (16) ◽  
pp. 3213-3216 ◽  
Author(s):  
A. R. Turner ◽  
M. E. Pemble ◽  
J. M. Fernández ◽  
B. A. Joyce ◽  
J. Zhang ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Molecular Beam Epitaxy Growth ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Reflectance Anisotropy ◽  
Gas Source ◽  
Time Observation ◽  
Real Time Observation

Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

1996 ◽  
Vol 35 (Part 2, No. 3B) ◽  
pp. L366-L369 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Shigeo Yamaguchi ◽  
Hitoshi Kurusu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity
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