Reflection High Energy Electron Diffraction Intensity Oscillations during the Growth of ZnSe on Cleaved GaAs(110) Surface by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l366 ◽

1996 ◽

Vol 35 (Part 2, No. 3B) ◽

pp. L366-L369 ◽

Author(s):

Hyun-Chul Ko ◽

Shigeo Yamaguchi ◽

Hitoshi Kurusu ◽

Yoichi Kawakami ◽

Shizuo Fujita ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

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Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films

Applied Physics Letters ◽

10.1063/1.108596 ◽

1993 ◽

Vol 62 (7) ◽

pp. 753-755 ◽

Author(s):

J. H. Neave ◽

J. Zhang ◽

X. M. Zhang ◽

P. N. Fawcett ◽

B. A. Joyce

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

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Reflection high‐energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112508 ◽

1994 ◽

Vol 65 (24) ◽

pp. 3066-3068 ◽

Author(s):

M. H. Xie ◽

J. Zhang ◽

S. M. Mokler ◽

J. M. Fernández ◽

B. A. Joyce

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

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Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80093-r ◽

1995 ◽

Vol 150 ◽

pp. 1015-1019 ◽

Author(s):

J. Zhang ◽

A.G. Taylor ◽

J.M. Fernández ◽

B.A. Joyce ◽

A.R. Turner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity ◽

Reflectance Anisotropy ◽

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Reflection High Energy Electron Diffraction Intensity Oscillations inFe3O4/MgOSuperlattices Grown by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2813 ◽

1997 ◽

Vol 36 (Part 1, No. 5A) ◽

pp. 2813-2816 ◽

Author(s):

Gung Chern ◽

Yo Ren Chean

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

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Layer‐by‐layer sublimation observed by reflection high‐energy electron diffraction intensity oscillation in a molecular beam epitaxy system

Applied Physics Letters ◽

10.1063/1.96194 ◽

1985 ◽

Vol 47 (3) ◽

pp. 286-288 ◽

Author(s):

Takeshi Kojima ◽

Naoyuki J. Kawai ◽

Tadashi Nakagawa ◽

Kimihiro Ohta ◽

Tsunenori Sakamoto ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Layer By Layer ◽

High Energy Electron ◽

Diffraction Intensity ◽

Intensity Oscillation ◽

Molecular Beam Epitaxy System

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On the period of reflection high‐energy electron diffraction intensity oscillations during Si molecular‐beam epitaxy on vicinal Si(001)

Journal of Applied Physics ◽

10.1063/1.349372 ◽

1991 ◽

Vol 70 (5) ◽

pp. 2614-2617 ◽

Author(s):

H. J. W. Zandvliet ◽

H. B. Elswijk ◽

D. Dijkkamp ◽

E. J. van Loenen ◽

J. Dieleman

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

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Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)

Physical Review B ◽

10.1103/physrevb.40.11799 ◽

1989 ◽

Vol 40 (17) ◽

pp. 11799-11803 ◽

Author(s):

J. Resh ◽

K. D. Jamison ◽

J. Strozier ◽

A. Bensaoula ◽

A. Ignatiev

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity

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Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach.

Physical Review Letters ◽

10.1103/physrevlett.60.1209 ◽

1988 ◽

Vol 60 (12) ◽

pp. 1209-1209

Author(s):

Shaun Clarke ◽

Dimitri D. Vvedensky

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Computational Modeling ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Modeling Approach

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Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582986 ◽

1985 ◽

Vol 3 (5) ◽

pp. 1317 ◽

Author(s):

B. F. Lewis

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Growth Kinetics ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity

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Reflection‐high‐energy‐electron‐diffraction intensity oscillations of Si(111) during gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.107372 ◽

1992 ◽

Vol 60 (1) ◽

pp. 56-58 ◽

Author(s):

W. K. Liu ◽

S. M. Mokler ◽

N. Ohtani ◽

J. Zhang ◽

B. A. Joyce

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

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