In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growth

In Situ Characterization of Thin Film Growth ◽

10.1533/9780857094957.1.3 ◽

2011 ◽

pp. 3-28 ◽

Author(s):

G. Koster

Keyword(s):

Thin Film ◽

Electron Diffraction ◽

Film Growth ◽

High Energy ◽

Thin Film Growth ◽

Energy Electron ◽

High Energy Electron ◽

In Situ Characterization

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The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585762 ◽

1991 ◽

Vol 9 (4) ◽

pp. 2189 ◽

Author(s):

C. W. Snyder

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

High Energy ◽

Scanning Tunneling ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Tunneling Microscopy

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Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80093-r ◽

1995 ◽

Vol 150 ◽

pp. 1015-1019 ◽

Author(s):

J. Zhang ◽

A.G. Taylor ◽

J.M. Fernández ◽

B.A. Joyce ◽

A.R. Turner ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity ◽

Reflectance Anisotropy ◽

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Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Journal of Applied Physics ◽

10.1063/1.352976 ◽

1993 ◽

Vol 73 (7) ◽

pp. 3291-3294 ◽

Author(s):

Kun‐jing Lee ◽

Joseph Ya‐min Lee ◽

Yu‐jeng Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Annealing Method

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Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)

Physical Review B ◽

10.1103/physrevb.40.11799 ◽

1989 ◽

Vol 40 (17) ◽

pp. 11799-11803 ◽

Author(s):

J. Resh ◽

K. D. Jamison ◽

J. Strozier ◽

A. Bensaoula ◽

A. Ignatiev

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity

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Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films?

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80192-f ◽

1995 ◽

Vol 150 ◽

pp. 117-122 ◽

Author(s):

Ch. Heyn ◽

M. Harsdorff

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Mass Spectroscopy ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

Smooth Surfaces ◽

High Energy Electron

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Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582986 ◽

1985 ◽

Vol 3 (5) ◽

pp. 1317 ◽

Author(s):

B. F. Lewis

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Growth Kinetics ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Diffraction Intensity

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A study of metalorganic molecular beam epitaxy growth of InAs by mass spectrometry and reflection high-energy electron diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90369-v ◽

1990 ◽

Vol 105 (1-4) ◽

pp. 240-243 ◽

Author(s):

B.W. Liang ◽

T.P. Chin ◽

L.Y. Wang ◽

C.W. Tu

Keyword(s):

Mass Spectrometry ◽

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Metalorganic Molecular Beam Epitaxy

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A study of strain-related effects in the molecular-beam epitaxy growth of InxGa1−xAs on GaAs using reflection high-energy electron diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583704 ◽

1987 ◽

Vol 5 (4) ◽

pp. 1162 ◽

Author(s):

Paul R. Berger

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron

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Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.3467136 ◽

2010 ◽

Vol 97 (3) ◽

pp. 031906 ◽

Author(s):

Cunxu Gao ◽

Hans-Peter Schönherr ◽

Oliver Brandt

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

In Situ Monitoring ◽

High Energy Electron ◽

Heteroepitaxial Growth

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