Three-dimensional nucleation with diffusion controlled growth

1984 ◽  
Vol 177 (1-2) ◽  
pp. 13-23 ◽  
Author(s):  
B.R. Scharifker ◽  
J. Mostany
1984 ◽  
Vol 177 (1-2) ◽  
pp. 25-37 ◽  
Author(s):  
J. Mostany ◽  
J. Mozota ◽  
B.R. Scharifker

1997 ◽  
Vol 55 (6) ◽  
pp. 7789-7792 ◽  
Author(s):  
T. Abel ◽  
E. Brener ◽  
H. Müller-Krumbhaar

2008 ◽  
Vol 23 (12) ◽  
pp. 3303-3308 ◽  
Author(s):  
Chien-Neng Liao ◽  
Ching-Hua Lee

Reactions of molten Sn–xCu (x = 0.05 to 1.0) alloys with Te substrate at 250 °C were investigated. A dosage of 0.1 wt% Cu in Sn is found to be effective in suppressing the vigorous Sn/Te reaction by forming a thin CuTe at the solder/Te interface. The CuTe morphology changes from irregular clusters into a layered structure with increasing Cu content in Sn. With the same reaction time, the CuTe thickness increases proportionally to the square root of Cu content in Sn–Cu alloys, suggesting a diffusion-controlled growth for CuTe.


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