Energy and momentum relaxation of charge carriers in Ge and Si under uniaxial stress

1978 ◽  
Vol 39 (4) ◽  
pp. 393-402 ◽  
Author(s):  
M. Sweid ◽  
K. Hess ◽  
K. Seeger
2002 ◽  
Vol 14 (13) ◽  
pp. 3457-3468 ◽  
Author(s):  
N Balkan ◽  
M C Arikan ◽  
S Gokden ◽  
V Tilak ◽  
B Schaff ◽  
...  

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 75-78 ◽  
Author(s):  
W. J. Gross ◽  
D. Vasileska ◽  
D. K. Ferry

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e–e and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.


1991 ◽  
Vol 6 (3) ◽  
pp. 175-180 ◽  
Author(s):  
N Balkan ◽  
R Gupta ◽  
Z Ciechanowska ◽  
B K Ridley ◽  
D Peacock ◽  
...  

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