Effect of impact ionisation on hot-carrier energy and momentum relaxation in semiconductors

1987 ◽  
Vol 20 (31) ◽  
pp. L861-L867 ◽  
Author(s):  
E Scholl ◽  
W Quade
Keyword(s):  
Hot Carrier ◽  
Carrier Energy ◽  
Impact Ionisation ◽  
Momentum Relaxation ◽  
Energy And Momentum

Energy and momentum relaxation of hot electrons in GaN/AlGaN

2002 ◽  
Vol 14 (13) ◽  
pp. 3457-3468 ◽  
Author(s):  
N Balkan ◽  
M C Arikan ◽  
S Gokden ◽  
V Tilak ◽  
B Schaff ◽  
...  
Keyword(s):  
Hot Electrons ◽  
Momentum Relaxation ◽  
Energy And Momentum

Determining plasmonic hot-carrier energy distributions via single-molecule transport measurements

Science ◽  
2020 ◽  
pp. eabb3457 ◽  
Author(s):  
Harsha Reddy ◽  
Kun Wang ◽  
Zhaxylyk Kudyshev ◽  
Linxiao Zhu ◽  
Shen Yan ◽  
...  
Keyword(s):  
Single Molecule ◽  
Plasmonic Nanostructures ◽  
Hot Carriers ◽  
Energy Distributions ◽  
Nanoscale Systems ◽  
Hot Carrier ◽  
Transport Measurements ◽  
Single Molecule Junctions ◽  
Molecule Transport ◽  
Carrier Energy

Hot-carriers in plasmonic nanostructures, generated via plasmon decay, play key roles in applications like photocatalysis and in photodetectors that circumvent band-gap limitations. However, direct experimental quantification of steady-state energy distributions of hot-carriers in nanostructures has so far been lacking. We present transport measurements from single-molecule junctions, created by trapping suitably chosen single molecules between an ultra-thin gold film supporting surface plasmon polaritons and a scanning probe tip, that can provide quantification of plasmonic hot-carrier distributions. Our results show that Landau damping is the dominant physical mechanism of hot-carrier generation in nanoscale systems with strong confinement. The technique developed in this work will enable quantification of plasmonic hot-carrier distributions in nanophotonic and plasmonic devices.

Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs

2015 ◽  
Vol 106 (18) ◽  
pp. 183505 ◽  
Author(s):  
V. Palankovski ◽  
S. Vainshtein ◽  
V. Yuferev ◽  
J. Kostamovaara ◽  
V. Egorkin
Keyword(s):  
Energy Relaxation ◽  
Hot Carrier ◽  
Carrier Energy

scholarly journals Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 75-78 ◽  
Author(s):  
W. J. Gross ◽  
D. Vasileska ◽  
D. K. Ferry
Keyword(s):  
Coulomb Interaction ◽  
Short Range ◽  
Three Dimensional ◽  
Real Space ◽  
Relaxation Processes ◽  
Dimensional Model ◽  
Impurity Effects ◽  
Three Dimensional Model ◽  
Momentum Relaxation ◽  
Energy And Momentum

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e–e and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.

Energy and momentum relaxation of electrons in GaAs/GaAlAs HEMT structures

1991 ◽  
Vol 6 (3) ◽  
pp. 175-180 ◽  
Author(s):  
N Balkan ◽  
R Gupta ◽  
Z Ciechanowska ◽  
B K Ridley ◽  
D Peacock ◽  
...  
Keyword(s):  
Momentum Relaxation ◽  
Energy And Momentum

FEMTOSECOND HOT CARRIER ENERGY REDISTRIBUTION IN GaAs AND AlGaAs

1988 ◽  
pp. 443-446
Author(s):  
R.W. Schoenlein ◽  
W.Z. Lin ◽  
S.D. Brorson ◽  
E.P. Ippen ◽  
J.G. Fujimoto
Keyword(s):  
Energy Redistribution ◽  
Hot Carrier ◽  
Carrier Energy

Femtosecond hot carrier energy redistribution in GaAs and AlGaAs

1988 ◽  
Vol 31 (3-4) ◽  
pp. 443-446 ◽  
Author(s):  
R.W. Schoenlein ◽  
W.Z. Lin ◽  
S.D. Brorson ◽  
E.P. Ippen ◽  
J.G. Fujimoto
Keyword(s):  
Energy Redistribution ◽  
Hot Carrier ◽  
Carrier Energy
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