4401904 Delay circuit used in semiconductor memory device

Microelectronics Reliability ◽

10.1016/0026-2714(84)90868-0 ◽

1984 ◽

Vol 24 (1) ◽

pp. 195

Author(s):

LionelS White ◽

NgaiH Hong

Keyword(s):

Memory Device ◽

Semiconductor Memory ◽

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4376985 Semiconductor memory device

Microelectronics Reliability ◽

10.1016/0026-2714(83)90981-2 ◽

1983 ◽

Vol 23 (6) ◽

pp. 1195-1196

Author(s):

Hideaki Isogai

Keyword(s):

Memory Device ◽

Semiconductor Memory

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4727516 Semiconductor memory device having redundancy means

Microelectronics Reliability ◽

10.1016/0026-2714(88)90127-8 ◽

1988 ◽

Vol 28 (5) ◽

pp. 838-839

Author(s):

Masahiro Yoshida ◽

Kanji Oishi

Keyword(s):

Memory Device ◽

Semiconductor Memory

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An Experimental Study of Reliability Improvement of a Semiconductor Memory Device with a Novel Self-Protected Fuse-Box Technique Using a Poly-Si Etch Stopper

10.7567/ssdm.2000.a-4-2 ◽

2000 ◽

Author(s):

Chi-Hoon Lee ◽

Young-Hoon Park ◽

Myoung-Hee Han ◽

Eun-Young Min ◽

Won-Hee Jang ◽

...

Keyword(s):

Experimental Study ◽

Memory Device ◽

Semiconductor Memory ◽

Reliability Improvement

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Diffusion Barrier Characteristics of TaSiN for Pt/TaSiN/Poly-Si Electrode Structure of Semiconductor Memory Device

Journal of The Electrochemical Society ◽

10.1149/1.1405520 ◽

2001 ◽

Vol 148 (11) ◽

pp. G611 ◽

Author(s):

Eung-Min Lee ◽

Woong-Chul Shin ◽

Young-Sim Choi ◽

Soon-Gil Yoon

Keyword(s):

Diffusion Barrier ◽

Memory Device ◽

Electrode Structure ◽

Semiconductor Memory

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A model for an amorphous semiconductor memory device

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(72)90242-6 ◽

1972 ◽

Vol 8-10 ◽

pp. 885-891 ◽

Author(s):

M.H. Cohen ◽

R.G. Neale ◽

A. Paskin

Keyword(s):

Memory Device ◽

Amorphous Semiconductor ◽

Semiconductor Memory

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4757475 Semiconductor memory device having diode matrix type decoder and redundancy configuration

Microelectronics Reliability ◽

10.1016/0026-2714(89)90607-0 ◽

1989 ◽

Vol 29 (2) ◽

pp. 293-294

Author(s):

Tomoharu Awaya

Keyword(s):

Memory Device ◽

Semiconductor Memory ◽

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4398267 Semiconductor memory device

Microelectronics Reliability ◽

10.1016/0026-2714(84)90870-9 ◽

1984 ◽

Vol 24 (1) ◽

pp. 196

Author(s):

Tohru Furuyama

Keyword(s):

Memory Device ◽

Semiconductor Memory

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4464750 Semiconductor memory device

Microelectronics Reliability ◽

10.1016/0026-2714(85)90179-9 ◽

1985 ◽

Vol 25 (2) ◽

pp. 401

Author(s):

Take Tatematsu

Keyword(s):

Memory Device ◽

Semiconductor Memory

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4768193 Semiconductor memory device having error correction function and incorporating redundancy configuration

Microelectronics Reliability ◽

10.1016/0026-2714(89)90543-x ◽

1989 ◽

Vol 29 (4) ◽

pp. 668

Author(s):

Yoshihiro Takemae

Keyword(s):

Error Correction ◽

Memory Device ◽

Correction Function ◽

Semiconductor Memory

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Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.4825 ◽

2005 ◽

Vol 44 (7A) ◽

pp. 4825-4830 ◽

Author(s):

Hideto Tomiye ◽

Toshio Terano ◽

Kazumasa Nomoto ◽

Toshio Kobayashi

Keyword(s):

Metal Oxide ◽

Electron Injection ◽

Memory Device ◽

Oxide Semiconductor ◽

Hot Electron ◽

Semiconductor Memory ◽

Hot Electron Injection ◽

Gate Structure ◽

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