Novel 2-Bit/Cell Metal–Oxide–Nitride–Oxide–Semiconductor Memory Device with Wrapped-Control-Gate Structure That Achieves Source-Side Hot-Electron Injection

2005 ◽  
Vol 44 (7A) ◽  
pp. 4825-4830 ◽  
Author(s):  
Hideto Tomiye ◽  
Toshio Terano ◽  
Kazumasa Nomoto ◽  
Toshio Kobayashi
Keyword(s):  
Metal Oxide ◽  
Electron Injection ◽  
Memory Device ◽  
Oxide Semiconductor ◽  
Hot Electron ◽  
Semiconductor Memory ◽  
Hot Electron Injection ◽  
Gate Structure ◽  
Nitride Oxide

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

Re-Examination of Performance and Reliability Degradation in Metal–Oxide–Nitride–Oxide–Semiconductor Memory with Ultrathin SiN Charge Trap Layers

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DD04
Author(s):  
Haruka Kusai ◽  
Misako Morota ◽  
Masato Oda ◽  
Shosuke Fujii ◽  
Kiwamu Sakuma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Semiconductor ◽  
Semiconductor Memory ◽  
Charge Trap ◽  
Nitride Oxide
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