Avalanche breakdown voltage of multiple epitaxial pn junctions

Solid-State Electronics ◽

10.1016/0038-1101(73)90183-4 ◽

1973 ◽

Vol 16 (4) ◽

pp. 459-466 ◽

Author(s):

R.A. Sunshine ◽

J. Assour

Keyword(s):

Breakdown Voltage ◽

Avalanche Breakdown ◽

Pn Junctions ◽

Avalanche Breakdown Voltage

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Avalanche breakdown voltage of multiple epitaxial pn junctions

Microelectronics Reliability ◽

10.1016/0026-2714(73)90245-x ◽

1973 ◽

Vol 12 (4) ◽

pp. 274

Keyword(s):

Breakdown Voltage ◽

Avalanche Breakdown ◽

Pn Junctions ◽

Avalanche Breakdown Voltage

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Precise method for determining avalanche breakdown voltage of silicon photomultipliers

Journal of Instrumentation ◽

10.1088/1748-0221/12/07/c07002 ◽

2017 ◽

Vol 12 (07) ◽

pp. C07002-C07002

Author(s):

I. Chirikov-Zorin

Keyword(s):

Breakdown Voltage ◽

Avalanche Breakdown ◽

Silicon Photomultipliers ◽

Precise Method ◽

Avalanche Breakdown Voltage

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Photodiode Signal Enhancement Effect at Avalanche Breakdown Voltage

Semiconductor Devices: Pioneering Papers ◽

10.1142/9789814503464_0133 ◽

1991 ◽

pp. 949-950

Author(s):

K. M. Johnson

Keyword(s):

Breakdown Voltage ◽

Signal Enhancement ◽

Avalanche Breakdown ◽

Enhancement Effect ◽

Photodiode Signal ◽

Avalanche Breakdown Voltage

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Avalanche breakdown voltage of GaAs hyperabrupt junctions

Solid-State Electronics ◽

10.1016/0038-1101(81)90184-2 ◽

1981 ◽

Vol 24 (12) ◽

pp. 1155-1160 ◽

Author(s):

Azuma Shimizu ◽

Tashika Koshimizu

Keyword(s):

Breakdown Voltage ◽

Avalanche Breakdown ◽

Avalanche Breakdown Voltage

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Calculation of avalanche breakdown voltage and depletion layer thickness in a P−N junction with a double error function doping profile

Solid-State Electronics ◽

10.1016/0038-1101(73)90160-3 ◽

1973 ◽

Vol 16 (5) ◽

pp. 611-616

Author(s):

M. Bakowski ◽

I. Lundström

Keyword(s):

Layer Thickness ◽

Breakdown Voltage ◽

Error Function ◽

Depletion Layer ◽

Doping Profile ◽

Avalanche Breakdown ◽

Avalanche Breakdown Voltage

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Correction [to "High speed photodiode signal enhancement at avalanche breakdown voltage"]

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1965.15482 ◽

1965 ◽

Vol 12 (4) ◽

pp. 231-231 ◽

Author(s):

Kenneth M. Johnson

Keyword(s):

Breakdown Voltage ◽

Signal Enhancement ◽

Avalanche Breakdown ◽

Photodiode Signal ◽

Avalanche Breakdown Voltage

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A fast method of calculating avalanche breakdown voltage of semiconductor p-n junction

Proceedings of the IEEE ◽

10.1109/proc.1981.11999 ◽

1981 ◽

Vol 69 (4) ◽

pp. 478-480 ◽

Author(s):

S. Ahmad

Keyword(s):

Breakdown Voltage ◽

Avalanche Breakdown ◽

Fast Method ◽

Avalanche Breakdown Voltage

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Optimization of 4H-SiC separated-absorption-charge-multiplication (SACM) avalanche photodiode with low avalanche breakdown voltage

Proceedings of 2011 International Conference on Electronics and Optoelectronics ◽

10.1109/iceoe.2011.6013480 ◽

2011 ◽

Author(s):

Rongdun Hong ◽

Xiaping Chen ◽

Mingkun Zhang ◽

Zhengyun Wu ◽

Yi Zhou

Keyword(s):

Breakdown Voltage ◽

Avalanche Photodiode ◽

Avalanche Breakdown ◽

Avalanche Breakdown Voltage

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Junction termination extension (JTE), A new technique for increasing avalanche breakdown voltage and controlling surface electric fields in P-N junctions

10.1109/iedm.1977.189277 ◽

1977 ◽

Author(s):

V.A.K. Temple

Keyword(s):

Electric Fields ◽

Breakdown Voltage ◽

New Technique ◽

Avalanche Breakdown ◽

A New Technique ◽

Avalanche Breakdown Voltage

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Temperature dependence of avalanche breakdown voltage Temperature dependence of avalanche breakdown voltage inp—njunctions†

International Journal of Electronics ◽

10.1080/00207217208938266 ◽

1972 ◽

Vol 32 (1) ◽

pp. 23-37 ◽

Author(s):

P. MARS

Keyword(s):

Temperature Dependence ◽

Breakdown Voltage ◽

Avalanche Breakdown ◽

Avalanche Breakdown Voltage

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