The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

In this paper describes the process of manufacturing ohmic contacts to diamond-like carbon (DLC) layer by depositing of Au/Mo/Ti metal layers. Contacts had good mechanical and adhesive properties. Their contact resistivity ranged from 1.4 ∙ 10-4 to 6.4 ∙ 10-5 Ohm ∙ cm2 depending on the DLC layer thickness. The temperature dependence of the films sheet resistance was studied. It is shown that thin DLC layers provide better ohmic contact characteristics due to their more uniform graphitization during thermal annealing.

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Sheet resistance–temperature dependence, thermal and electrical analysis of As40S60−xSex thin films

Applied Physics A ◽

10.1007/s00339-019-3217-1 ◽

2019 ◽

Vol 126 (1) ◽

Cited By ~ 3

Author(s):

E. R. Shaaban ◽

M. Y. Hassaan ◽

M. G. Moustafa ◽

Ammar Qasem ◽

El Sayed Yousef

Keyword(s):

Thin Films ◽

Temperature Dependence ◽

Sheet Resistance ◽

Electrical Analysis

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Polyimide degradation induced by irradiation with N+ ions

Journal of Materials Research ◽

10.1557/jmr.1997.0227 ◽

1997 ◽

Vol 12 (6) ◽

pp. 1661-1665 ◽

Cited By ~ 9

Author(s):

V. Švorčík ◽

I. Miček ◽

V. Rybka ◽

V. Hnatowicz ◽

F. Černý

Keyword(s):

Charge Transport ◽

Temperature Dependence ◽

Thermoelectric Power ◽

Sheet Resistance ◽

Ion Beam ◽

Measured Temperature ◽

Variable Range Hopping ◽

Double Bonds ◽

Semiconductor Properties

The samples of Upilex R polyimide (PI) were irradiated with 90 keV N+ ions to the fluences from 5 × 1014 to 2 × 1017 cm−2, and sheet resistance (Rs) and thermoelectric power (TEP) were measured in dependence on the ion fluence and the sample temperature. The Rs achieves its minimum for the ion fluence of 1 × 1017 cm−2, and from the measured temperature dependence of Rs it may be concluded that the ion beam modified PI exhibits semiconductor properties with charge transport governed by the variable range hopping mechanism. The measured TEP of the PI samples irradiated to the fluences above 1 × 1016 cm−2 is low (the order of μV/K). Such properties are typical for metals, and the conclusion is that the charge transport in the irradiated PI samples is contributed by the mechanisms which are characteristic for both semiconductors and metals. The role of conjugated double bonds was examined by measuring absorption UV-VIS spectra. The number of the conjugated double bonds correlates with observed Rs, and the width of the forbidden band, determined from UV-VIS spectra, is a decreasing function of the ion fluence.

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Understanding the Formation and Temperature Dependence of Thick-Film Ag Contacts on High-Sheet-Resistance Si Emitters for Solar Cells

Journal of The Electrochemical Society ◽

10.1149/1.2001507 ◽

2005 ◽

Vol 152 (10) ◽

pp. G742 ◽

Cited By ~ 61

Author(s):

Mohamed M. Hilali ◽

Mowafak M. Al-Jassim ◽

Bobby To ◽

Helio Moutinho ◽

Ajeet Rohatgi ◽

...

Keyword(s):

Solar Cells ◽

Temperature Dependence ◽

Thick Film ◽

Sheet Resistance

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Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100053188 ◽

1982 ◽

Vol 40 ◽

pp. 78-79

Author(s):

Kenneth H. Downing ◽

Robert M. Glaeser

Keyword(s):

Electron Beam ◽

Fatty Acid ◽

Inelastic Scattering ◽

Temperature Dependence ◽

Structural Damage ◽

Direct Result ◽

Second Step ◽

Strong Temperature Dependence ◽

Electron Dose ◽

Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

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Temperature Dependence of Magnetic Domains and Wall Structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009573x ◽

1972 ◽

Vol 30 ◽

pp. 496-497

Author(s):

Sonoko Tsukahara ◽

Tadami Taoka ◽

Hisao Nishizawa

Keyword(s):

Temperature Dependence ◽

Domain Walls ◽

Magnetic Domain ◽

Iron Film ◽

Objective Lens ◽

Lorentz Microscopy ◽

Domain Structures ◽

Wall Structures ◽

Crystal Films ◽

Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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