Forward current-voltage characteristics of gallium arsenide power diodes at high current densities

1988 ◽  
Vol 31 (6) ◽  
pp. 1101-1104 ◽  
Author(s):  
L.A. Delimova ◽  
Yu.V. Zhilyaev ◽  
V.Yu. Kachorovsky ◽  
M.E. Levinshtein ◽  
V.V. Rossin
Keyword(s):  
Gallium Arsenide ◽  
High Current ◽  
Power Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

2000 ◽  
Vol 338-342 ◽  
pp. 1319-1322
Author(s):  
N.V. Dyakonova ◽  
Pavel A. Ivanov ◽  
V.A. Kozlov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

2005 ◽  
Vol 108-109 ◽  
pp. 713-716 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
A.E. Cherenkov ◽  
Alexey N. Kuznetsov ◽  
Alla S. Tregubova ◽  
...  
Keyword(s):  
Quantum Well ◽  
Free Exciton ◽  
High Current ◽  
Excess Current ◽  
Forward Current ◽  
Current Voltage ◽  
Barrier Type ◽  
Current Voltage Characteristics ◽  
Exciton Annihilation ◽  
Injection Electroluminescence

Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

1999 ◽  
Vol 46 (11) ◽  
pp. 2188-2194 ◽  
Author(s):  
N.V. Dyakonova ◽  
P.A. Ivanov ◽  
V.A. Kozlov ◽  
M.E. Levinshtein ◽  
J.W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

2017 ◽  
Vol 51 (8) ◽  
pp. 1081-1086
Author(s):  
T. T. Mnatsakanov ◽  
A. G. Tandoev ◽  
M. E. Levinshtein ◽  
S. N. Yurkov ◽  
J. W. Palmour
Keyword(s):  
Schottky Diodes ◽  
High Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Minority Carriers

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

Sign in / Sign up

Export Citation Format

Share Document