Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD

1989 ◽  
Vol 148 ◽  
Author(s):  
T. Egawa ◽  
S. Nozaki ◽  
N. Noto ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Intermediate Layer ◽  
Forward Bias ◽  
Voltage Characteristic ◽  
Current Voltage Characteristic ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Strained Layer Superlattice ◽  
Step Growth

ABSTRACTWe have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

New Method for Improving the Electrical Characteristics of P-N Junction Diode

2011 ◽  
Vol 378-379 ◽  
pp. 606-609 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Amporn Poyai ◽  
Surasak Niemcharoen
Keyword(s):  
Carrier Lifetime ◽  
Series Resistance ◽  
Device Performance ◽  
Electrical Characteristics ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

2011 ◽  
Vol 109 (7) ◽  
pp. 074512 ◽  
Author(s):  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Timothy D. Corrigan ◽  
Jianzhi Zhao ◽  
Zhifang Cao ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Barrier Heights ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

scholarly journals Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics

2017 ◽  
Vol 5 (1) ◽  
pp. 11
Author(s):  
S.B. Rybalka ◽  
E.Yu. Krayushkina ◽  
A.A. Demidov ◽  
O.A. Shishkina ◽  
B.P. Surin
Keyword(s):  
Schottky Diode ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Analytical Models ◽  
Drift Diffusion ◽  
Continuity Equations ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Ideal

Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

scholarly journals The Effect of Grain Boundaries on Schottky Diode Parameters

2004 ◽  
Vol 1 (2) ◽  
pp. 258-263
Author(s):  
Baghdad Science Journal
Keyword(s):  
Activation Energy ◽  
Grain Boundaries ◽  
Schottky Diode ◽  
Optical Band Gap ◽  
Unit Area ◽  
X Ray ◽  
Current Voltage ◽  
Microscopic Studies ◽  
Current Voltage Characteristics ◽  
P Type

The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%.

Concentration Effects on n-GaN Schottky Diode Current-Voltage (i-v) Characteristics

2006 ◽  
Vol 517 ◽  
pp. 159-164
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Linear Relationship ◽  
Carrier Concentration ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
Forward Bias ◽  
Concentration Effects ◽  
Reverse Leakage Current ◽  
Forward Current ◽  
Current Voltage

We focus on the epi layer carrier concentration variation effects to improve the current – voltage (I-V) characteristics of an n-GaN schottky diode. The carrier concentration of 1×10 15cm-3, 1×1016 cm−3, 1×1017 cm−3 were employed. The simulated current was obtained by forward biasing the device of up to 2Volt at room temperature using Pt electrode. The study was conducted by using Atlas/Blaze using various models such as Consrh (Concentration Dependent Shockley Read Hall), Cvt (Lombardi Model), Fermi (Fermi Dirac), Bgn (Bandgap Narrowing), Conmob (Concentration Dependent Mobility), Auger (Auger). We found that as the concentration increases the value of forward current also increase linearly when biased at maximum of 2 volts. The reverse bias characteristics at the same concentration of the simulated diode up to 100Volt were also determined. We found that at low carrier concentration the reverse leakage current is minimum and breakdown voltage is maximum. As the carrier concentration increases there is a linear relationship between reverse leakage current and epi layer doping carrier concentration. By analyzing the forward and reverse characteristics we conclude that in forward bias for low carrier concentration the diode shows schottky rectifying behavior while for higher carrier concentration the diode shows ohmic behavior. For higher carrier concentration there is a linear relationship between carrier concentration (n) and forward current. The reverse leakage current is minimum approaching an ideal value at n≤1×1015cm-3 and breakdown voltage is maximum at these values of concentration. Increasing the concentration from n≤1×1015cm-3 the value of reverse leakage current is approaching to the maximum value as a result breakdown voltage decreases. We conclude that for n-GaN schottky diode the ideal schottky rectifying behavior of I-V characteristics is obtained at carrier concentration of n≤ 1×1015cm-3 for the simulated diodes at different carrier concentration.

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