Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Solid-State Electronics ◽

10.1016/0038-1101(95)00093-9 ◽

1996 ◽

Vol 39 (1) ◽

pp. 83-87 ◽

Cited By ~ 79

Author(s):

Enise Ayyildiz ◽

Abdulmecit Türüt ◽

Hasan Efeoğlu ◽

Sebahattin Tüzemen ◽

Mustafa Sağlam ◽

...

Keyword(s):

Interfacial Layer ◽

Series Resistance ◽

Schottky Diodes ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.749 ◽

2016 ◽

Vol 858 ◽

pp. 749-752 ◽

Cited By ~ 4

Author(s):

Anatoly M. Strel'chuk ◽

Viktor V. Zelenin ◽

Alexei N. Kuznetsov ◽

Joseph Tringe ◽

Albert V. Davydov ◽

...

Keyword(s):

Series Resistance ◽

Degradation Mechanism ◽

Schottky Diodes ◽

Defect Structures ◽

Induced Current ◽

Forward Current ◽

Current Voltage ◽

Before And After ◽

Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.239 ◽

2010 ◽

Vol 645-648 ◽

pp. 239-242 ◽

Cited By ~ 1

Author(s):

Takuro Tomita ◽

M. Iwami ◽

M. Yamamoto ◽

M. Deki ◽

Shigeki Matsuo ◽

...

Keyword(s):

Silicon Carbide ◽

Femtosecond Laser ◽

Single Crystal ◽

Specific Resistance ◽

Single Crystal Silicon ◽

Metal Contacts ◽

Crystal Silicon ◽

Current Voltage ◽

Fs Laser ◽

Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

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