Determination of silicon power diode recombination parameters by combining open circuit voltage decay and storage time-reverse recovery data

1991 ◽  
Vol 34 (7) ◽  
pp. 771-780 ◽  
Author(s):  
Ermanno Di Zitti ◽  
Giacomo M. Bisio
Keyword(s):  
Storage Time ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Decay ◽  
And Storage ◽  
Power Diode

scholarly journals Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity

1997 ◽  
Vol 19 (4) ◽  
pp. 225-238
Author(s):  
B. Affour ◽  
P. Mialhe
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Voltage Decay ◽  
Recombination Velocity

The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulation study by considering the mathematical solution of the continuity equation. Extracted values ofτand S are compared to their input values in order to evaluate the performances of our method and the precision with regard to cell structural parameters, namely the base width and the base doping level. Deviations in lifetime values remain lower than 7% for almost all the cell configurations while recombination velocity deviations are shown to be dependent on cell structure parameters and experimental procedure.

Heavy doping effects on open circuit voltage decay in an abrupt p+-n junction

1994 ◽  
Vol 37 (10) ◽  
pp. 1775-1777
Author(s):  
S.S. De ◽  
A.K. Ghosh ◽  
A.K. Hajra ◽  
M. Bera ◽  
J.C. Haldar
Keyword(s):  
Open Circuit Voltage ◽  
Open Circuit ◽  
Voltage Decay ◽  
Doping Effects ◽  
Heavy Doping

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

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