A simple method for determining capacitive coupling coefficients in floating-gate devices

In this paper, a bi-level microstrip differential directional coupler has been investigated. It has been shown that the equalization of coupling coefficients can be successfully made with the use of appropriate dielectric stack-up and conductor geometry. The application of additional top dielectric layer can ensure proper equalization of coupling coefficients by lowering the value of capacitive coupling coefficient to the value of the inductive one. The theoretically investigated coupled-line section has been used for the design of a 3-dB differential directional coupler. The measurement results are compared with the theoretical ones.

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Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

10.1109/tencon.1995.496439 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.M. Kim ◽

Y. Jun ◽

Y.S. Sohn ◽

J.W. Kim ◽

I. Choi

Keyword(s):

Flash Memory ◽

Capacitive Coupling ◽

Memory Devices ◽

Coupling Coefficients

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Suspended stripline coupled lines with grounded strips for equalization of inductive and capacitive coupling coefficients

Microwave and Optical Technology Letters ◽

10.1002/mop.25085 ◽

2010 ◽

Vol 52 (4) ◽

pp. 874-877

Author(s):

Slawomir Gruszczynski

Keyword(s):

Capacitive Coupling ◽

Coupling Coefficients ◽

Coupled Lines

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A new technique for determining the capacitive coupling coefficients in flash EPROMs

IEEE Electron Device Letters ◽

10.1109/55.145074 ◽

1992 ◽

Vol 13 (6) ◽

pp. 328-331 ◽

Cited By ~ 21

Author(s):

K.T. San ◽

C. Kaya ◽

D.K.Y. Liu ◽

T.-P. Ma ◽

P. Shah

Keyword(s):

Capacitive Coupling ◽

New Technique ◽

Coupling Coefficients ◽

A New Technique

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Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor

E3S Web of Conferences ◽

10.1051/e3sconf/202018504071 ◽

2020 ◽

Vol 185 ◽

pp. 04071

Author(s):

Sheng Sun ◽

Shengdong Zhang

Keyword(s):

Nonvolatile Memory ◽

Thin Film Transistor ◽

Floating Gate ◽

Pmma Film ◽

Organic Thin Film ◽

Simple Method ◽

Solution Processed ◽

Floating Gate Transistor ◽

Electron Carriers ◽

Bipolar Semiconductor

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

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