AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.
Monitoring of surface ligand and gold cluster ions produced by pulsed-laser-induced desorption/ionization of gold nanoparticles enables the transduction and amplification of mass signals for biosensing and bioimaging applications.
Doubly- and Triply- Charged Diatomic Molybdenum Cluster Ions As Observed in Pulsed-Laser Assisted Local-Electrode Atom-Probe (LEAPTM) Tomography
