Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

2009 ◽  
Vol 1210 ◽  
Author(s):  
Javier Olea Ariza ◽  
David Pastor ◽  
María Toledano-Luque ◽  
Ignacio Mártil ◽  
Germán González-Díaz ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Vibrational Mode ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Intermediate Band ◽  
X Ray ◽  
Tof Sims ◽  
Crystalline Domains ◽  
Secondary Ion

AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

1996 ◽  
Vol 426 ◽  
Author(s):  
D. Compaan ◽  
Z. Feng ◽  
G. Contreras-Puente ◽  
C. Narayanswamy ◽  
A. Fischer
Keyword(s):  
Energy Gap ◽  
Vibrational Mode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Constant Energy ◽  
X Ray ◽  
Cdte Solar Cells ◽  
Mode Behavior ◽  
Spectroscopy Optical

AbstractInterdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

1994 ◽  
Vol 341 ◽  
Author(s):  
S. Bauer ◽  
L. Beckers ◽  
M. Fleuster ◽  
J. Schubert ◽  
W. Zander ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Erbium Doped ◽  
Film Preparation ◽  
Er Doped ◽  
Secondary Ion

AbstractThe growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

Overheating and Undercooling in Silicon During Pulsed-Laser Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Krf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTWe have used time-resolved x-ray diffraction measurements of thermal expansion induced strain to measure overheating and undercooling in <100> and <111> oriented silicon during pulsed laser melting and regrowth. 249 nm (KrF) excimer laser pulses of 1.2 J/cm2 energy density and 25 ns FWHM were synchronized with x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) to carry out Bragg profile measurements with ±2 ns time resolution. Combined overheating and undercooling values of 120 ± 30 K and 45 ± 20 K were found for the <111> and <100> orientations, respectively, and these values have been used to obtain information on the limiting regrowth velocities for silicon.

scholarly journals Characterization and Structure–Property Relationships of Organic–Inorganic Hybrid Composites Based on Aluminum–Magnesium Hydroxycarbonate and Azo Chromophore

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 880 ◽  
Author(s):  
Anna Marzec ◽  
Bolesław Szadkowski ◽  
Jacek Rogowski ◽  
Waldemar Maniukiewicz ◽  
Marian Zaborski
Keyword(s):  
Mass Spectrometry ◽  
Azo Dye ◽  
Secondary Ion Mass Spectrometry ◽  
Hybrid Composites ◽  
Structure Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

In this study, novel organic–inorganic composites were prepared by the complexation of dicarboxylic azo dye (AD) with aluminum–magnesium hydroxycarbonate (AlMg–LH). This procedure provides an effective method for the stabilization of dicarboxylic organic chromophores on an AlMg−LH host. The structures of the hybrid composites were examined by X-ray diffraction (XRD), secondary ion mass spectrometry (TOF-SIMS), 27-Al solid-state nuclear magnetic resonance (NMR) spectroscopy, thermogravimetric analysis (TGA) and scanning transmission electron microscopy (STEM). The TOF-SIMS method was applied to investigate the metal–dye interactions and to monitor the thermal stability of the organic–inorganic complexes. Secondary ion mass spectrometry confirmed the presence of a characteristic peak for C18H10O5N2Mg22+, indicating that both carboxylic groups interacted with AlMg−LH by forming complexes with two Mg2+ ions. Modification with hybrid pigments affected the crystal structure of the AlMg−LH mineral, as shown by the appearance of new peaks on the X-ray diffraction patterns. Adsorption of the dicarboxylic chromophore not only led to significantly enhanced solvent resistance but also improved the thermal and photostability of the hybrid pigments. We propose a possible arrangement of the azo dye in the inorganic matrix, as well as the presumed mechanism of stabilization.

Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

X-ray diffraction lineshape analysis of pulsed laser deposited ZnO nano-structured thin films

2019 ◽  
Vol 473 ◽  
pp. 298-302 ◽  
Author(s):  
Shatha Kaassamani ◽  
Wassim Kassem ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lineshape Analysis

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Optimization of Structure of Soft Block for Design of Adaptive Polyurethanes

2020 ◽  
Vol 869 ◽  
pp. 273-279
Author(s):  
Marina A. Gorbunova ◽  
Denis V. Anokhin ◽  
Valentina A. Lesnichaya ◽  
Alexander A. Grishchuk ◽  
Elmira R. Badamshina
Keyword(s):  
Mutual Influence ◽  
Glycol Adipate ◽  
Mass Ratio ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Crystallization Conditions ◽  
Crystalline Domains ◽  
Kinetics Of

A synthesis of new di-and triblock polyurethane thermoplastic copolymers containing different mass ratio of two crystallizing blocks - poly (1,4-butylene glycol) adipate and poly-ε-caprolactone diols was developed. Using combination of danamometric analysis, IR-spectroscopy, differential scanning calorimetry and X-ray diffraction, the effect of the soft block composition and crystallization conditions on crystal structure and thermal behavior of the obtained polymers have been studied. For the triblock copolymers we have shown a possibility of control the kinetics of material hardening and final mechanical characteristics due to the mutual influence of polydiols during crystallization. In the result, the second crystallizing component allows to control amount, structure and quality of crystalline domains in polyurethanes by variation of crystallization conditions.

Sign in / Sign up

Export Citation Format

Share Document