Optical properties of quantum wires produced by strain patterning of GaAsAlGaAs quantum wells

1990 ◽  
Vol 228 (1-3) ◽  
pp. 415-417 ◽  
Author(s):  
K. Kash ◽  
J.M. Worlock ◽  
Derek D. Mahoney ◽  
A.S. Gozdz ◽  
B.P. Van der Gaag ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Wires

ELECTRONIC AND OPTICAL PROPERTIES OF QUASI-ONE-DIMENSIONAL CARRIERS IN QUANTUM WIRES

1995 ◽  
Vol 04 (01) ◽  
pp. 99-140 ◽  
Author(s):  
M. GRUNDMANN ◽  
J. CHRISTEN ◽  
D. BIMBERG ◽  
E. KAPON
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Bulk Material ◽  
Theoretical Calculations ◽  
Optical Quality ◽  
Structural And Optical Properties ◽  
High Optical Quality ◽  
Intersubband Relaxation

We review structural and optical properties of quantum wires (QWRs), grown on nonplanar substrates. Our approach of in situ wire formation on patterned substrates allows us to fabricate defect free QWRs of high optical quality, suitable for laser and other optoelectronic applications. Several types of wires and wire arrangements are investigated in detail: single QWRs, vertical QWR stacks, lateral sub-μm pitch QWR arrays and pseudomorphic QWRs. Theoretical calculations are performed for electronic eigenstates (with inclusion of strain effects) as well as the lineshape of spontaneous radiative recombination. The lateral bandgap modulation, carrier capture into the QWRs, subsequent intersubband relaxation, cooling, interband recombination, and bandgap renormalization are systematically investigated and compared to current theories and previously obtained results for quantum wells or bulk material.

Determination of Optical Properties of the Micro-Facetted InGaAs Quantum Wells and Quantum Wires Using Magnetophotoluminescence

1996 ◽  
Vol 452 ◽  
Author(s):  
Sung-Bock Kim ◽  
Jeong-Rae Ro ◽  
El-Hang Lee
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Wells ◽  
Ground State ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Chemical Beam Epitaxy ◽  
Gaas Substrates ◽  
Planar Substrates

AbstractWe report optical properties of the micro-facetted InGaAs quantum wells and quantum wires on non-planar substrates employing magnetophotoluminescence (MPL). The InGaAs/GaAs structures were grown by chemical beam epitaxy on V-groove patterned GaAs substrates. In the presence of a magnetic field of 18 T, the diamagnetic shifts of exciton ground states of the (001)-and side-QWLs are ΔE=15.6 and 10.3 meV, respectively. In MPL of the facetted microstructure, we found that the different diamagnetic shifts strongly depend on the magnitude of the effective magnetic field as well as the quantum confinement. From comparing the intensities and full widths at half maximum, we easily found that side-QWLs are of higher quality than (OOl)-QWLs. We also fabricated InGaAs/GaAs quantum wires with a size of about 200 Å × (500–600) Å. By fitting the diamagnetic shifts (ΔΕ = 9.5 meV) of the exciton ground state with the calculated results of a variational method, we estimated that the reduced mass of the exciton is approximately 0.052 me.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field
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