Determination of Optical Properties of the Micro-Facetted InGaAs Quantum Wells and Quantum Wires Using Magnetophotoluminescence

1996 ◽  
Vol 452 ◽  
Author(s):  
Sung-Bock Kim ◽  
Jeong-Rae Ro ◽  
El-Hang Lee
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Wells ◽  
Ground State ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Chemical Beam Epitaxy ◽  
Gaas Substrates ◽  
Planar Substrates

AbstractWe report optical properties of the micro-facetted InGaAs quantum wells and quantum wires on non-planar substrates employing magnetophotoluminescence (MPL). The InGaAs/GaAs structures were grown by chemical beam epitaxy on V-groove patterned GaAs substrates. In the presence of a magnetic field of 18 T, the diamagnetic shifts of exciton ground states of the (001)-and side-QWLs are ΔE=15.6 and 10.3 meV, respectively. In MPL of the facetted microstructure, we found that the different diamagnetic shifts strongly depend on the magnitude of the effective magnetic field as well as the quantum confinement. From comparing the intensities and full widths at half maximum, we easily found that side-QWLs are of higher quality than (OOl)-QWLs. We also fabricated InGaAs/GaAs quantum wires with a size of about 200 Å × (500–600) Å. By fitting the diamagnetic shifts (ΔΕ = 9.5 meV) of the exciton ground state with the calculated results of a variational method, we estimated that the reduced mass of the exciton is approximately 0.052 me.

The influences of parabolic potential and magnetism on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells

2021 ◽  
Author(s):  
Saren Gaowa ◽  
Yan-Bo Geng ◽  
Zhao-Hua Ding ◽  
Jing-Lin Xiao
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Barrier Height ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Cyclotron Frequency ◽  
Strongly Coupled ◽  
Parabolic Potential ◽  
Do So

In this research, the effects of magnetism and parabolic potential on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells (AGQWs) were investigated. To do so, the following six parameters were studied, temperature, AGQW barrier height, Gaussian confinement potential (GCP) width, confinement strengths along the directions of [Formula: see text] and [Formula: see text], as well as magnetic field cyclotron frequency. The relationships among frequency oscillation, AGQW parameters and polaron ground state energy in RbCl crystal were studied based on linear combination operator and Lee–Low–Pines unitary transformation. It was concluded that ground state energy absolute value was decreased by increasing GCP width and temperature, and increased with the increase of confinement strength along [Formula: see text] and [Formula: see text] directions, cyclotron frequency of magnetic field and barrier height of AGQW. It was also found that vibrational frequency was increased by enhancing confinement strengths along the directions of [Formula: see text] and [Formula: see text], magnetic field cyclotron frequencies, barrier height AGQW and temperature and decreased with the increase of GCP width.

Effect of the magnetic field on optical properties of GaN/AlN multiple quantum wells

2013 ◽  
Vol 134 ◽  
pp. 88-95 ◽  
Author(s):  
M. Solaimani ◽  
Morteza Izadifard ◽  
H. Arabshahi ◽  
Sarkardei Mohammad Reza
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
The Magnetic Field

Magnetic field dependence optical properties of GaN/AlN multiple quantum wells

Optik ◽  
2013 ◽  
Vol 124 (18) ◽  
pp. 3194-3197 ◽  
Author(s):  
M. Solaimani ◽  
Izadifard Morteza ◽  
H. Arabshahi ◽  
Sarkardei Mohammad Reza
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Wells ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION

2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Multiple Quantum Wells ◽  
Saturable Absorption ◽  
Multiple Quantum ◽  
Transmission Spectra ◽  
Single Quantum Well ◽  
Mbe Growth ◽  
High Reflection

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.

VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2948-2954
Author(s):  
C. A. DUARTE ◽  
G. M. GUSEV ◽  
T. E. LAMAS ◽  
A. K. BAKAROV ◽  
J.-C. PORTAL
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Zeeman Splitting ◽  
Exchange Contribution ◽  
G Factor ◽  
Valley Splitting ◽  
Perpendicular Component ◽  
Magneto Resistance ◽  
The Magnetic Field

Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Landé g -factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g -factor.

Determination of the Optical Properties of AlGaAs/GaAs Multiple Quantum Wells by Using Power-dependent Photoluminescence

2014 ◽  
Vol 64 (2) ◽  
pp. 121-125
Author(s):  
Janghyun CHO ◽  
Yong-Sub JUNG ◽  
Clare Chisu BYEON* ◽  
Jin Dong SONG ◽  
 Eun Hye LEE
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optical properties of quantum wires produced by strain patterning of GaAsAlGaAs quantum wells

1990 ◽  
Vol 228 (1-3) ◽  
pp. 415-417 ◽  
Author(s):  
K. Kash ◽  
J.M. Worlock ◽  
Derek D. Mahoney ◽  
A.S. Gozdz ◽  
B.P. Van der Gaag ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Quantum Wires

Formation of Quantum Wires by Strain-Induced Lateral-Layer Ordering Process: Growth Mechanism and Device Applications

1995 ◽  
Vol 417 ◽  
Author(s):  
K. Y. Cheng ◽  
K. C. Hsieh
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Active Regions ◽  
Growth Direction ◽  
Single Step ◽  
Composition Modulation ◽  
Gaas Substrates ◽  
Straightforward Method ◽  
Device Applications ◽  
Substrate Patterning

AbstractGaxIn1−xAs and GaxIn1−xP quantum wire (QWR) arrays were grown by a single-step molecular beam epitaxy. Lateral Ga(In composition modulation perpendicular to the growth direction occurs spontaneously during the growth of (GaAs)m/(InAs)n or (GaP)m/(InP)n shortperiod superlattices on InP or GaAs substrates, respectively, by the strain-induced lateral-layer ordering (SILO) process, producing lateral quantum wells. This straightforward method employs standard on-axis (001)-oriented substrates, and requires no pre-growth substrate patterning, nor does it involve post-growth processing for the formation of QWRs. Both GaxIn1−xAs infrared (1.7 μm) lasers and GaxIn1−xP visible (0.7 μm) lasers with QWR active regions have been successfully fabricated. These lasers showed many unique features that have never been observed in quantum well lasers.

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