Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces

1995 ◽  
Vol 328 (3) ◽  
pp. 215-226 ◽  
Author(s):  
M.A. Lutz ◽  
R.M. Feenstra ◽  
J.O. Chu
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Cross Sectional

In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

1995 ◽  
Vol 399 ◽  
Author(s):  
Y.-C. Kim ◽  
M. J. Nowakowski ◽  
D. N. Seidman
Keyword(s):  
Sample Preparation ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Preparation Technique ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Sample Preparation Technique

ABSTRACTA novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

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