In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

1995 ◽  
Vol 399 ◽  
Author(s):  
Y.-C. Kim ◽  
M. J. Nowakowski ◽  
D. N. Seidman
Keyword(s):  
Sample Preparation ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Preparation Technique ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Sample Preparation Technique

ABSTRACTA novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

scholarly journals In situ video-STM studies of the mechanisms and dynamics of electrochemical bismuth nanostructure formation on Au

2016 ◽  
Vol 193 ◽  
pp. 171-185 ◽  
Author(s):  
H. Matsushima ◽  
S.-W. Lin ◽  
S. Morin ◽  
O. M. Magnussen
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Temporal Resolution ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Tunneling Microscopy ◽  
Atomic Arrangement ◽  
Surface Plane ◽  
Structural Fluctuations

The microscopic mechanisms of Bi electrodeposition on Au(111) and Au(100) electrodes in the overpotential regime were studied by in situ scanning tunneling microscopy with high spatial and temporal resolution. Atomic resolution images of the needle-like Bi(110) deposits formed on Au(111) reveal the central influence of covalent Bi–Bi bonds on the deposit morphology. In the straight steps along the needle edges the Bi atoms are interlinked by these bonds, whereas at the needle tip and at kinks along the needle edges dangling bonds exist, explaining the rapid structural fluctuations at these sites. For ultrathin Bi deposits on Au(100) a more open atomic arrangement was found within the surface plane, which was tentatively assigned to an epitaxially stabilised Bi(111) film. Furthermore, well-defined nanowires, consisting of zigzag chains of Bi surface atoms, were observed on this surface.

STM observation of formation process of carbon nanotube from 6H-SiC (000-1)

2005 ◽  
Vol 901 ◽  
Author(s):  
Takahiro Maruyama ◽  
Yasuyuki Kawamura ◽  
Hyungjin Bang ◽  
Naomi Fujita ◽  
Tomoyuki Shiraiwa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscopy ◽  
Formation Process ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Carbon Networks ◽  
Thermally Treated

AbstractFormation process of nanosized cap structures on a thermally treated 6H-SiC(000-1) substrate was investigated using atomic-resolution ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). After formation of clusters of carobon particles 1-2 nanometer in diameter at 1150°C, these nanoparticles merged, forming nanosized cap structures. Hexagonal carbon networks, partly composed of pentagons, were clearly observed on the surface of the cap structures for a sample annealed above 1200°C. A model for the formation of carbon nanocaps on 6H-SiC(000-1) was proposed.

AN STM STUDY OF THE (2×4) AND c(4×4) RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY

1994 ◽  
Vol 01 (04) ◽  
pp. 621-624 ◽  
Author(s):  
A.R. AVERY ◽  
D.M. HOLMES ◽  
T.S. JONES ◽  
B.A. JOYCE
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Unit Cell ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Unit Cells ◽  
Stm Images

Atomic resolution scanning tunneling microscopy (STM) has been used to study the Asterminated (2×4) and c(4×4) reconstructions formed on GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Filled states STM images of the (2×4) surface always showed unit cells consisting of two As dimers in the top layer. Cooling this surface under an As flux led initially to a highly kinked (2×4) phase before the transition to the c(4×4) structure. At no point were three As dimers observed in the top layer for the (2×4) unit cell. The c(4×4) structure involves the chemisorption of a second layer of As onto an already As-terminated surface. STM images of this surface showed a series of bright rectangular blocks consisting, when complete, of three pairs of As atoms.

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