High-temperature scanning tunneling microscopy on vicinal Si(111) and formation of ordered facets

1996 ◽  
Vol 357-358 ◽  
pp. 949-953 ◽  
Author(s):  
T. Kampschulte ◽  
G. Wilhelmi ◽  
H. Neddermeyer
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Scanning

IN-SITU HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTH TiN(001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 589-593 ◽  
Author(s):  
S. KODAMBAKA ◽  
V. PETROVA ◽  
A. VAILIONIS ◽  
P. DESJARDINS ◽  
D. G. CAHILL ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscopy ◽  
Ostwald Ripening ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Decay Kinetics ◽  
Tunneling Microscopy ◽  
Temperature Scanning

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN (001) terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.

Sign in / Sign up

Export Citation Format

Share Document