The influence of titanium dioxides, alumina and calcium carbonate on the thermal stability of barium carbonate

1983 ◽  
Vol 61 (3) ◽  
pp. 375-378 ◽  
Author(s):  
Rodica Scarlat ◽  
E. Segal ◽  
Georgeta Tomus ◽  
Maria Constantin
2008 ◽  
Vol 109 (5) ◽  
pp. 3087-3092 ◽  
Author(s):  
Hun-Sik Kim ◽  
Byung Hyun Park ◽  
Jae Hoon Choi ◽  
Jin-San Yoon

2017 ◽  
Vol 54 (4) ◽  
pp. 708-714
Author(s):  
Cristian Barbu Mic ◽  
Marcela Mihai ◽  
Cristian Dragos Varganici ◽  
Simona Schwarz ◽  
Dan Scutaru ◽  
...  

This study follows the possibility to tune the thermal stability of some CaCO3/polymer composites by crystal growth from supersaturated solutions controlled by polymer structure or by using nonstoichiometric polyelectrolyte complexes (NPECs). As the ratio between the organic and inorganic parts in the composites controls the Ca2+/polymer network crosslinking density, the CaCO3/polymer weight ratio was kept constant at 50/1, varying the initial concentration of the polyanions solutions (0.05 or 0.06 wt.%), the NPECs molar ratio , n+/n- (0.2 or 0.4), or the inorganic precursors concentration (0.25 or 0.3 M). Poly(2-acrylamido-2-methylpropanesulfonic acid-co-acrylic acid) (PSA) and chondroitin-4-sulfate (CSA) were used as polyanions. Some NPEC dispersions, prepared with the same polyanions and poly(allylamine hydrochloride) (PAH), were also used for calcium carbonate crystallization. The characteristics of the prepared composites were investigated by scanning electron microscopy (SEM), flow particle image analysis (FPIA), particles charge density (CD), zeta-potential (ZP). The thermal stability of the composite particles was investigated as compared to bare CaCO3 microparticles prepared at the same initial inorganic concentrations.


2020 ◽  
Vol 14 (4) ◽  
pp. 504-513
Author(s):  
Michael Bratychak ◽  
◽  
Olena Astakhova ◽  
Olena Shyshchak ◽  
◽  
...  

A monocarboxylic derivative of Epidian-6 with free epoxy and carboxylic end groups (MCDER) has been synthesized using Epidian-6 epoxy resin and sebacic acid. The structure of MCDER was confirmed by a spectral analysis. The thermal stability of MCDER has been established and the formation of cross-linked films based on epoxy-oligomeric mixtures consisting of Epidian-5, TGM-3 oligoesteracrylate, and polyethylene polyamine has been studied in its presence. By means of IR spectroscopy, the chemistry of the mixtures formation has been established. Physico-mechanical characteristics and morphology of the epoxy-oligomeric mixture based samples which were filled with CaCO3 have been determined.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


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