Friction coefficient of SiC, TiC and GeC coatings with excess carbon formed by plasma-assisted chemical vapour deposition

1992 ◽  
Vol 208 (2) ◽  
pp. 158-160 ◽  
Author(s):  
K. Oguri ◽  
T. Arai
2018 ◽  
Vol 72 (2) ◽  
pp. 181-188
Author(s):  
Noor Ayuma Mat Tahir ◽  
Mohd Fadzli Bin Abdollah ◽  
Noreffendy Tamaldin ◽  
Mohd Rody Bin Mohamad Zin ◽  
Hilmi Amiruddin

Purpose The purpose of this paper is to study the effect of hydrogen (H2) gas on the graphene growth from fruit cover plastic waste (FCPW) and oil palm fibre (OPF), as a solid feedstock, towards the coefficient of friction (COF) properties. Design/methodology/approach Graphene film growth on copper (Cu) substrate was synthesised from FCPW and OPF, as a solid feedstock, using the chemical vapour deposition (CVD) method, at atmospheric pressure. The synthesised graphene was characterised using Raman spectroscopy, Scanning Electron Microscopy (SEM) and Electron Dispersed Spectroscopy (EDS). Surface hardness and roughness were measured using a nano-indenter and surface profilometer, respectively. Then, a dry sliding test was executed using a ball-on-disc tribometer at constant speed, sliding distance and load, with coated and uncoated copper sheet as the counter surface. Findings The presence of H2 gas reduced the running-in time of the dry sliding test. However, there is no significant effect at the constant COF region, where the graphene growth from FCPW shows the lowest COF among other surfaces. Research limitations/implications This paper is limited to graphene growth using the CVD method with selected parameters. Originality/value To the authors’ knowledge, this is the first paper on growing graphene from palm oil fiber via the CVD method and its subsequent analysis, based on friction coefficient properties.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>


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