226. Choice of regimes of preparation of n-p-n silicon planar transistors with application of the ion implantation method
2018 ◽
Vol 28
(3)
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pp. 847-853
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Keyword(s):
2005 ◽
Vol 44
(No. 43)
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pp. L1316-L1319
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1998 ◽
Vol 54
(1-3)
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pp. 301-304
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