2009 International Workshop on Junction Technology
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45

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4

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Published By IEEE

9781424433193

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166212 ◽

2009 ◽

Author(s):

Yoji Kawasaki ◽

Yoshiki Maruyama ◽

Hidefumi Yoshimura ◽

Hiroshi Miyatake ◽

Kentaro Shibahara

Keyword(s):

Sheet Resistance ◽

Shallow Junction ◽

Junction Formation

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Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166215 ◽

2009 ◽

Author(s):

Osamu Nakatsuka ◽

Shingo Akimoto ◽

Tsuyoshi Nishimura ◽

Shigeaki Zaima

Keyword(s):

Electrical Properties ◽

Schottky Contacts ◽

Interfacial Structure

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The impact of junction depth on vertical sidewall MOSFETs with embedded gate

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166218 ◽

2009 ◽

Author(s):

Chih-Hao Kuo ◽

Jyi-Tsong Lin ◽

Tai-Yi Lee ◽

Yi-Chuen Eng ◽

Tzu-Feng Chang ◽

...

Keyword(s):

Junction Depth ◽

Vertical Sidewall ◽

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Research and development strategies to fast advance China's semiconductor industry

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166204 ◽

2009 ◽

Author(s):

Ran Liu

Keyword(s):

Research And Development ◽

Semiconductor Industry ◽

Development Strategies

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Recent advance in single-ion implantation method for single-dopant devices

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166228 ◽

2009 ◽

Author(s):

Takahiro Shinada ◽

Masahiro Hori ◽

Keigo Taira ◽

Tetsuo Endoh ◽

Iwao Ohdomari

Keyword(s):

Ion Implantation ◽

Implantation Method

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Study of damage accumulation and annealing process at low energy boron implantation using molecular dynamics simulations

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166237 ◽

2009 ◽

Author(s):

Takaaki Aoki ◽

Jiro Matsuo

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulations ◽

Damage Accumulation ◽

Annealing Process ◽

Boron Implantation ◽

Dynamics Simulations

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Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166221 ◽

2009 ◽

Author(s):

M. Bersani ◽

G. Pepponi ◽

D. Giubertoni ◽

S. Gennaro ◽

M. A. Sahiner ◽

...

Keyword(s):

Laser Annealing ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Spike Annealing ◽

Non Equilibrium

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Electrical transport characterization of nano CMOS devices with ultra-thin silicon film

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166220 ◽

2009 ◽

Author(s):

G. Ghibaudo ◽

M. Mouis ◽

L. Pham-Nguyen ◽

K. Bennamane ◽

I. Pappas ◽

...

Keyword(s):

Electrical Transport ◽

Silicon Film ◽

Thin Silicon ◽

Thin Silicon Film

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Diffusion-less ultra-shallow p+/n junction formation in Si using low-temperature solid phase epitaxy and non-melt laser annealing

2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166233 ◽

2009 ◽

Author(s):

R. Kaneko ◽

S. Hara ◽

T. Fukaya ◽

S. Matsumoto ◽

T. Suzuki ◽

...

Keyword(s):

Low Temperature ◽

Laser Annealing ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Junction Formation

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2009 International Workshop on Junction Technology ◽

10.1109/iwjt.2009.5166203 ◽

2009 ◽

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