7575. Epitaxial growth of Al(100) on Si(100) by gas-temperature-controlled chemical vapor deposition

Vacuum ◽  
1991 ◽  
Vol 42 (10-11) ◽  
pp. 682
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Temperature ◽  
Temperature Controlled

Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition

1988 ◽  
Vol 27 (Part 2, No. 9) ◽  
pp. L1775-L1777 ◽  
Author(s):  
Tsukasa Kobayashi ◽  
Atsushi Sekiguchi ◽  
Naokichi Hosokawa ◽  
Tatsuo Asamaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Temperature ◽  
Temperature Controlled

Epitaxial Growth of Al on Si By Gas-Temperature-Controlled CVD

1988 ◽  
Vol 131 ◽  
Author(s):  
Tsukasa Kobayashi ◽  
Atsushi Sekiguchi ◽  
Naokichi Hosokawa ◽  
Tatsuo Asamaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Gas Temperature ◽  
Pressure Chemical ◽  
Temperature Controlled

ABSTRACTEpitaxial Al(111) film was deposited on Si(lll) by low-pressure chemical vapor deposition with the use of tri-isobutyl aluminum (TIBA) at the substrate temperature of 400 °C with the deposition rate of 0.9 μm/min. It was necessary for epitaxy to preheat the TIBA gas just before the deposition on the substrate. The preheat was made by gas-temperature-controller provided in the chamber. The film surface was so smooth that reflectance was higher than 90 % of Si and 20 ppm of O, C, and H. No hillock appeared on the film after 430 °C annealing for 40 min. The interface of Al and Si was rather stable so that no alloy penetration occured. The possibility of epitaxial growth of Al(100) on Si(100) was also shown.

Growth of Al films by gas‐temperature‐controlled chemical vapor deposition

1992 ◽  
Vol 10 (3) ◽  
pp. 525-538 ◽  
Author(s):  
Tsukasa Kobayashi ◽  
Atsushi Sekiguchi ◽  
Naoto Akiyama ◽  
Naokichi Hosokawa ◽  
Tatsuo Asamaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Temperature ◽  
Temperature Controlled

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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