Physical characterization of In2Se3 thin films prepared by electron beam evaporation

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 997-1000 ◽  
Author(s):  
D Manno ◽  
G Micocci ◽  
R Rella ◽  
P Siciliano ◽  
A Tepore
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Physical Characterization

On the Growth and Physical-chemical Characterization of Tb5Si2Ge2 Thin Films Produced by Electron-beam Evaporation

2015 ◽  
Vol 2 (1) ◽  
pp. 26-32
Author(s):  
A.L. Pires ◽  
J.H. Belo ◽  
I.T. Gomes ◽  
L. Fernandes ◽  
P.B. Tavares ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Chemical Characterization ◽  
Electron Beam Evaporation ◽  
Physical Chemical

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

2011 ◽  
Vol 46 (4) ◽  
pp. 615-620 ◽  
Author(s):  
Reza Keshavarzi ◽  
Valiollah Mirkhani ◽  
Majid Moghadam ◽  
Shahram Tangestaninejad ◽  
Iraj Mohammadpoor-Baltork ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

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