Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

2011 ◽  
Vol 46 (4) ◽  
pp. 615-620 ◽  
Author(s):  
Reza Keshavarzi ◽  
Valiollah Mirkhani ◽  
Majid Moghadam ◽  
Shahram Tangestaninejad ◽  
Iraj Mohammadpoor-Baltork ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

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