Degradation of filled polymers, high temperature and thermal oxidation processes

1992 ◽  
Vol 37 (3) ◽  
pp. 257
Author(s):  
Norman S. Allen
1990 ◽  
Vol 204 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
O.J. Glembocki ◽  
V.M. Bermudez

ABSTRACTOxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.


2018 ◽  
Vol 924 ◽  
pp. 440-443
Author(s):  
Yeganeh Bonyadi ◽  
Peter M. Gammon ◽  
Olayiwola Alatise ◽  
Roozbeh Bonyadi ◽  
Philip A. Mawby

In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices.


2019 ◽  
Vol 71 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Bingxue Cheng ◽  
Haitao Duan ◽  
Yongliang Jin ◽  
Lei Wei ◽  
Jia Dan ◽  
...  

Purpose This paper aims to investigate the thermal oxidation characteristics of the unsaturated bonds (C=C) of trimethylolpropane trioleate (TMPTO) and to reveal the high temperature oxidation decay mechanism of unsaturated esters and the nature of the anti-oxidation properties of the additives. Design/methodology/approach Using a DXR laser microscopic Raman spectrometer and Linkam FTIR600 temperature control platform, the isothermal oxidation experiments of TMPTO with or without 1.0 wt. % of different antioxidants were performed. Findings The results indicated that the Raman peaks of =C-H, C=C and -CH2- weaken gradually with prolonged oxidation time, and the corresponding Raman intensities drop rapidly at higher temperatures. The aromatic amine antioxidant can decrease the attenuation of peak intensity, as it significantly reduces the rate constant of C=C thermal oxidation. The hindered phenolic antioxidant has a protective effect during the early stages of oxidation (induction period), but it may accelerate the oxidation of C=C afterwards. Originality/value Research on the structure changes of synthetic esters during oxidation by Raman spectroscopy will be of great importance in promoting the use of Raman spectroscopy to analyze the oxidation of lubricants.


1996 ◽  
Vol 143 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Nakashima ◽  
T. Katayama ◽  
Y. Miyamura ◽  
A. Matsuzaki ◽  
M. Kataoka ◽  
...  

2009 ◽  
Vol 45 (4) ◽  
pp. 260-266 ◽  
Author(s):  
Han Sheng ◽  
Cheng Xinguo ◽  
Ma Shujie ◽  
Ren Tianhui

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