Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

1990 ◽  
Vol 204 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
O.J. Glembocki ◽  
V.M. Bermudez
Keyword(s):  
Raman Spectroscopy ◽  
Gallium Arsenide ◽  
High Temperature ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Atomic Oxygen ◽  
Oxidation States ◽  
Translational Energy ◽  
Oxidation Processes ◽  
As Species

ABSTRACTOxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

scholarly journals Characteristics of oxide layer grown on gallium arsenide using 2. 8 eV translational energy atomic oxygen

1990 ◽  
Author(s):  
J.B. Cross ◽  
M.A. Hoffbauer ◽  
J.D. Farr ◽  
V.M. Bermudez ◽  
O.J. Glembocki
Keyword(s):  
Gallium Arsenide ◽  
Oxide Layer ◽  
Atomic Oxygen ◽  
Translational Energy

In situ Raman spectroscopy study on the effect of antioxidants on high temperature oxidation properties of TMPTO

2019 ◽  
Vol 71 (5) ◽  
pp. 706-711 ◽  
Author(s):  
Bingxue Cheng ◽  
Haitao Duan ◽  
Yongliang Jin ◽  
Lei Wei ◽  
Jia Dan ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Thermal Oxidation ◽  
High Temperature Oxidation ◽  
Isothermal Oxidation ◽  
In Situ Raman Spectroscopy ◽  
Temperature Oxidation ◽  
Content Type ◽  
Structure Changes ◽  
Oxidation Properties

Purpose This paper aims to investigate the thermal oxidation characteristics of the unsaturated bonds (C=C) of trimethylolpropane trioleate (TMPTO) and to reveal the high temperature oxidation decay mechanism of unsaturated esters and the nature of the anti-oxidation properties of the additives. Design/methodology/approach Using a DXR laser microscopic Raman spectrometer and Linkam FTIR600 temperature control platform, the isothermal oxidation experiments of TMPTO with or without 1.0 wt. % of different antioxidants were performed. Findings The results indicated that the Raman peaks of =C-H, C=C and -CH2- weaken gradually with prolonged oxidation time, and the corresponding Raman intensities drop rapidly at higher temperatures. The aromatic amine antioxidant can decrease the attenuation of peak intensity, as it significantly reduces the rate constant of C=C thermal oxidation. The hindered phenolic antioxidant has a protective effect during the early stages of oxidation (induction period), but it may accelerate the oxidation of C=C afterwards. Originality/value Research on the structure changes of synthetic esters during oxidation by Raman spectroscopy will be of great importance in promoting the use of Raman spectroscopy to analyze the oxidation of lubricants.

Thermal Oxidation of Cu Interconnects Capped with CoWP

2005 ◽  
Vol 863 ◽  
Author(s):  
J. Gambino ◽  
S. Smith ◽  
S. Mongeon ◽  
D. Meatyard ◽  
F. Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Whisker Growth ◽  
Oxidation Mechanism ◽  
Dielectric Barrier ◽  
Cu Interconnects ◽  
Thick Oxide Layer ◽  
Temperature Exposure

AbstractThe thermal oxidation of Cu interconnects, at 350°C in air, has been studied as a function of thickness of a CoWP capping layer. For thin CoWP layers (25 nm), a thick oxide layer (200 nm) is formed which is mainly composed of Cu20. For thick CoWP layers (50 nm), the oxide layer is much thinner (36 nm) and is mainly composed of CoO. For both CoWP thicknesses, depletion of the underlying Cu is often observed after oxidation and whisker growth is often observed on the surface. The results are consistent with an oxidation mechanism where metal is the dominant diffusing species. For thin CoWP layers, Cu diffuses more quickly to the surface than Co, and therefore mainly Cu oxides are formed. For thick CoWP layers, the Cu diffusion to the surface is greatly reduced, and as a result, mainly Co oxides are formed. These results indicate that CoWP is not a good barrier for thermal oxidation, so high temperature exposure to oxidizing ambients must be minimized during processing of integrated circuits where CoWP is used instead of a dielectric barrier.

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

scholarly journals High-Temperature Oxidation Properties and Microstructural Evolution of Nanostructure Fe-Cr-Al ODS Alloys

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 526
Author(s):  
Zhengyuan Li ◽  
Lijia Chen ◽  
Haoyu Zhang ◽  
Siyu Liu
Keyword(s):  
High Temperature ◽  
Oxide Layer ◽  
Microstructural Evolution ◽  
High Temperature Oxidation ◽  
Oxide Dispersion Strengthened ◽  
Al Alloy ◽  
Temperature Oxidation ◽  
X Ray ◽  
Plasma Sintering ◽  
Ods Alloys

The oxidation behavior and microstructural evolution of the nanostructure of Fe-Cr-Al oxide dispersion strengthened (ODS) alloys prepared by spark plasma sintering were investigated by high-temperature oxidation experiments in air at 1200 °C for 100 h. The formation of Al2O3 scale was observed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) line scans. The oxidation rate of Fe-Cr-Al ODS alloys is lower than that of conventional Fe-Cr-Al alloys, and the oxide layer formed on the Fe-Cr-Al alloy appeared loose and cracked, whereas the oxide layer formed on the Fe-Cr-Al ODS alloys was adherent and flat. This is due to the high density of dispersed nano-oxides hindering the diffusion of Al element and the formation of vacancies caused by them. In addition, the nano-oxides could also adhere to the oxide layer. Besides, the microstructure of the Fe-Cr-Al ODS alloy had excellent stability during high-temperature oxidation.

Light Source, Excitation, and High Temperature Cell Assembly for Raman Spectroscopy

1961 ◽  
Vol 15 (2) ◽  
pp. 47-52 ◽  
Author(s):  
George J. Janz ◽  
Yukio Mikawa ◽  
David W. James
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Light Source ◽  
Cell Assembly ◽  
Source Excitation
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