The chemical sputtering of silica by Ar+ ions and XeF2

1984 ◽  
Vol 141 (2-3) ◽  
pp. A202
Author(s):  
M.A. Loudiana ◽  
A. Schmid ◽  
J.T. Dickinson ◽  
E.J. Ashley
Keyword(s):  
1988 ◽  
Vol 129 ◽  
Author(s):  
Christoph Steinbruchel

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.


1982 ◽  
Vol 111-112 ◽  
pp. 744-749 ◽  
Author(s):  
R. Yamada ◽  
K. Nakamura ◽  
M. Saidoh

1981 ◽  
Vol 23 (2) ◽  
pp. 823-835 ◽  
Author(s):  
Yung-Yi Tu ◽  
T. J. Chuang ◽  
Harold F. Winters
Keyword(s):  

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