A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

1985 ◽  
Vol 3 (9-10) ◽  
pp. 325-330 ◽  
Author(s):  
V. Swaminathan ◽  
A. Jayaraman ◽  
J.L. Zilko ◽  
R.A. Stall
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Liquid Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gaas Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth and Characterization of Epitaxial GaAs Deposited by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
A. D. Huelsman ◽  
E. Yoon ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structural Quality ◽  
Organic Chemical ◽  
Epitaxial Gaas ◽  
Gaas Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTEpitaxial GaAs films have been deposited using a Plasma-Enhanced Metal Organic Chemical Vapor Deposition (PE-MOCVD) technique. This technique uses an RF discharge to dissociate arsine and hydrogen upstream from the substrate. The plasma increases the partial pressure of arsenic above the substrate and improves the growth and quality of GaAs films grown at low teyperature and with low arsine flow rates. We have used photoluminescence, Hall measurements, dislocation etches, and transmission electron microscopy (TEM) to study the properties of films grown with and without plasma. enhancement under a variety of reactor conditions. Specular epitaxial layers of n-GaAs were grown with and without plastua at, very low pressures (2 – 3 Torr) on semiinsulating GaAs substrates. Layers grown both with and without the plasma showed good mobility and photoluminescence at deposition temperatures of 650°C. At lower deposition temperatures the films deposited with the plasma were better than those deposited without the plasma. A KOH-NaOH eutectic etch revealed a better structural quality in films deposited with plasma at low arsine partial pressure.

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

1989 ◽  
Vol 145 ◽  
Author(s):  
L. M. Fraas ◽  
G. R. Girard ◽  
V. S. Sundaram ◽  
Chris Master ◽  
Rick Stall
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
High Throughput ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Production Environment ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractMetal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

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