The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

1989 ◽  
Vol 145 ◽  
Author(s):  
L. M. Fraas ◽  
G. R. Girard ◽  
V. S. Sundaram ◽  
Chris Master ◽  
Rick Stall
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
High Throughput ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Production Environment ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractMetal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

scholarly journals Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

2006 ◽  
Vol 955 ◽  
Author(s):  
C. Ugolini ◽  
N. Nepal ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Excitation Energies ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN is an excellent host for Er due to the low thermal quenching of radiative intra-4f Er3+ transitions at 1.54 μm. Er doped GaN structures are promising for emitters and amplifiers operating at the main telecommunication wavelength. In recent studies, Er doped III-Nitride epilayers were obtained by ion implantation, hydride vapor phase epitaxy (HVPE), metal organic molecular beam epitaxy (MOMBE), or molecular beam epitaxy (MBE). But, in-situ Er doping of III-nitride epilayers has not been achieved by metal organic chemical vapor deposition (MOCVD), mostly due to the low vapor pressure and lack of suitable, metal organic Er sources. Since n and p type III-nitride epilayers with excellent electrical properties and high crystalline quality are easily achieved by the MOCVD method, in-situ incorporation of Er into III-nitride materials by MOCVD is a very attractive method for creating highly efficient optoelectronic devices operating at 1.54 μm. We report on the experimental study and synthesis of Er doped GaN by MOCVD. Photoluminescence (PL) with above and below bandgap excitation energies were employed to study the optical properties of Er doped GaN. PL spectra of these Er doped layers exhibit a strong 1.54 μm emission, corresponding to the intra-4f transition of the 4I13/2 (first excited state) to the 4I15.2 (ground state) of Er3+. The mechanisms of optical transitions involving different excitation energies, and potential applications of Er doped GaN structures in the communication wavelength are also discussed.

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