Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition
2015 ◽
Vol 15
(5)
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pp. 2144-2150
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2016 ◽
Vol 55
(5S)
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pp. 05FB03
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2017 ◽
Vol 42
(14)
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pp. 9243-9251
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1983 ◽
Vol 130
(8)
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pp. 1782-1783
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2008 ◽
Vol 26
(3)
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pp. 1157
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