Epitaxial growth of CaF2 thin films on (100) GaAs by pulsed-laser deposition and in-situ annealing

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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Epitaxial growth of 1 μm thick nonlinear optical KNbO/sub 3/ thin films by pulsed laser deposition with in situ laser annealing

Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464) ◽

10.1109/cleopr.1999.817754 ◽

2003 ◽

Author(s):

A. Machida ◽

N. Ishida ◽

S. Fukaya ◽

M. Obara

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Nonlinear Optical ◽

Laser Annealing ◽

Pulsed Laser ◽

Laser Deposition

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Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

Applied Physics Letters ◽

10.1063/1.1634387 ◽

2003 ◽

Vol 83 (26) ◽

pp. 5500-5502 ◽

Cited By ~ 10

Author(s):

J.-R. Duclère ◽

M. Guilloux-Viry ◽

V. Bouquet ◽

A. Perrin ◽

E. Cattan ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition

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Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

Thin Solid Films ◽

10.1016/s0040-6090(02)00658-2 ◽

2002 ◽

Vol 420-421 ◽

pp. 107-111 ◽

Cited By ~ 159

Author(s):

H Kim ◽

J.S Horwitz ◽

S.B Qadri ◽

D.B Chrisey

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Doped Zno

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Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

Journal of Applied Physics ◽

10.1063/1.359441 ◽

1995 ◽

Vol 77 (9) ◽

pp. 4724-4728 ◽

Cited By ~ 125

Author(s):

R. D. Vispute ◽

J. Narayan ◽

Hong Wu ◽

K. Jagannadham

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Laser Deposition

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Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-243-495 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

K. Nashimoto ◽

D. K. Fork ◽

F. A. Ponce ◽

T. H. Geballe

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Buffer Layers ◽

Laser Deposition ◽

Hrtem Observation ◽

Device Applications ◽

Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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