Influence of structure process flow and high current implantation on gate oxide degradation

1989 ◽  
Vol 36 (4) ◽  
pp. 439-445
Author(s):  
R. Ploss ◽  
M. Harley-Stead ◽  
S. Weisshuhn ◽  
K. Lehner ◽  
H. Glawischnig
Keyword(s):  
Gate Oxide ◽  
High Current ◽  
Process Flow ◽  
Oxide Degradation

Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Manufacturing Technique ◽  
Oxide Degradation

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging

Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

2022 ◽  
pp. 1-1
Author(s):  
Minghang Xie ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
Quanming Luo ◽  
Xiong Du
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation ◽  
Degradation Monitoring ◽  
Gate Charge

Temperature accelerated gate oxide degradation under plasma-induced charging

1996 ◽  
Vol 17 (6) ◽  
pp. 288-290 ◽  
Author(s):  
T. Brozek ◽  
Y.D. Chan ◽  
C.R. Viswanathan
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation

Ultrathin gate oxide degradation under different rates of charge injection

1999 ◽  
Author(s):  
Pitsini Mongkolkachit ◽  
Bharat L. Bhuva ◽  
Sharad Prasad ◽  
N. Bui ◽  
Sherra E. Kerns
Keyword(s):  
Charge Injection ◽  
Gate Oxide ◽  
Oxide Degradation

S-Passivation of the Ge Gate Stack Using (NH4)2S

2012 ◽  
Vol 187 ◽  
pp. 23-26 ◽  
Author(s):  
Sonja Sioncke ◽  
Claudia Fleischmann ◽  
Dennis Lin ◽  
Evi Vrancken ◽  
Matty Caymax ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Gate Stack ◽  
Process Flow ◽  
Oxide Deposition

The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.

Effect of Electron Shading on Gate Oxide Degradation

1998 ◽  
Vol 37 (Part 1, No. 4B) ◽  
pp. 2321-2324 ◽  
Author(s):  
Shigenori Sakamori ◽  
Takahiro Maruyama ◽  
Nobuo Fujiwara ◽  
Hiroshi Miyatake
Keyword(s):  
Gate Oxide ◽  
Oxide Degradation

Mechanisms and solutions to gate oxide degradation in flash memory by tunnel-oxide nitridation engineering

2005 ◽  
Vol 26 (6) ◽  
pp. 363-365 ◽  
Author(s):  
Szu-Yu Wang ◽  
Chih-Yuan Chin ◽  
Pei-Ren Jeng ◽  
Ling-Wu Yang ◽  
Ming-Shiang Chen ◽  
...  
Keyword(s):  
Flash Memory ◽  
Gate Oxide ◽  
Oxide Degradation
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