S-Passivation of the Ge Gate Stack Using (NH4)2S
2012 ◽
Vol 187
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pp. 23-26
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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.
2018 ◽
Vol 924
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pp. 494-497
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Keyword(s):
Keyword(s):
2019 ◽
Vol 66
(4)
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pp. 1710-1716
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1989 ◽
Vol 36
(4)
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pp. 439-445
2016 ◽
Vol 16
(3)
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pp. 300-304
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