Characterization of cubic boron nitride films grown by mass separated ion beam deposition

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.

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Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

Thin Solid Films ◽

10.1016/j.tsf.2008.06.032 ◽

2008 ◽

Vol 516 (23) ◽

pp. 8604-8608 ◽

Cited By ~ 24

Author(s):

C. Bundesmann ◽

I.-M. Eichentopf ◽

S. Mändl ◽

H. Neumann

Keyword(s):

Stress Relaxation ◽

Ion Beam ◽

Optical Characterization ◽

Sio2 Films ◽

Ion Beam Deposition ◽

Beam Deposition

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Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2019.2908254 ◽

2019 ◽

Vol 29 (5) ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Michael E. Cyberey ◽

Tannaz Farrahi ◽

Michael Eller ◽

Jiwei Lu ◽

Robert M. Weikle ◽

...

Keyword(s):

Ion Beam ◽

Ion Beam Deposition ◽

Beam Deposition

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Preparation and characterization of cubic boron nitride and metal boron nitride films*

Surface and Interface Analysis ◽

10.1002/sia.740220133 ◽

1994 ◽

Vol 22 (1-12) ◽

pp. 139-148 ◽

Cited By ~ 7

Author(s):

W. Gissler

Keyword(s):

Boron Nitride ◽

Cubic Boron Nitride ◽

Boron Nitride Films

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Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Applied Surface Science ◽

10.1016/j.apsusc.2010.12.129 ◽

2011 ◽

Vol 257 (10) ◽

pp. 4699-4705 ◽

Cited By ~ 23

Author(s):

Y. Tang ◽

Y.S. Li ◽

Q. Yang ◽

A. Hirose

Keyword(s):

Thin Films ◽

Amorphous Carbon ◽

Ion Beam ◽

Hydrogenated Amorphous Carbon ◽

Ion Beam Deposition ◽

Carbon Thin Films ◽

Hydrogenated Amorphous ◽

Beam Deposition

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Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-402-517 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 1

Author(s):

H. Shibatal ◽

Y. Makital ◽

H. Katsumata ◽

S. Kimura ◽

N. Kobayashil ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Low Energy ◽

Knudsen Cell ◽

Ion Beam Deposition ◽

Deposited Films ◽

Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

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