Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

scholarly journals Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)

2019 ◽  
Vol 29 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Michael E. Cyberey ◽  
Tannaz Farrahi ◽  
Michael Eller ◽  
Jiwei Lu ◽  
Robert M. Weikle ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

scholarly journals Ion beam deposition and surface characterization of thin multi-component oxide films during growth

1998 ◽  
Vol 253 (1-2) ◽  
pp. 221-233 ◽  
Author(s):  
A.R. Krauss ◽  
J. Im ◽  
V. Smentkowski ◽  
J.A. Schultz ◽  
O. Auciello ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Ion Beam ◽  
Oxide Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion beam deposition and structural characterization of GMR spin valves

1997 ◽  
Vol 33 (3) ◽  
pp. 2369-2374 ◽  
Author(s):  
S.X. Wang ◽  
W.E. Bailey ◽  
C. Surgers
Keyword(s):  
Structural Characterization ◽  
Ion Beam ◽  
Spin Valves ◽  
Ion Beam Deposition ◽  
Beam Deposition

Characterization of Films Made from Silicon Oil Saturated Methane Vapor by Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Sin-Shong Lin ◽  
Janes M. Sloan
Keyword(s):  
Saturated Vapor ◽  
Ion Beam ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Silicon Oil ◽  
Ion Beam Deposition ◽  
Steel Substrates ◽  
Beam Deposition

ABSTRACTAmorphous carbon films were prepared by the ion beam deposition of methane saturated with silicon pump oil 704. The concentration of Si in the ion deposited coatings could be varied by the temperature of silicon oil bath where saturated vapor was produced. In the process, the vapor ionized at 800 V was accelerated and impinged on glass or stainless steel substrates at ion densities between 0.3–1.5 mA/cm2 for a period of less than 60 minutes. The resulting films were characterized by x-ray photoelectron and Raman spectroscopies. The elemental components of these films include carbon, oxygen and silicon with varying amounts of nitrogen, iron and tungsten contaminations. The microstructure mainly consists of tiny graphitic carbon with sp2 ordered and disordered configurations, numerous carbon-oxygen and carbon-silicon linkages. This simple unique process yields a homogeneous thin coating suitable for many tribological applications.

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