Thin copper films deposited by low temperature plasma-enhanced metal organic chemical vapour deposition using copper-acetylacetonate

1993 ◽  
Vol 59 (1-3) ◽  
pp. 212-216 ◽  
Author(s):  
A. Hamerich ◽  
L. Lottermoser ◽  
J. Müller
1995 ◽  
Vol 391 ◽  
Author(s):  
S.S. Yoon ◽  
S.W. Kang ◽  
S.S. Chun

AbstractCopper was deposited onto TiN by low pressure metal-organic chemical vapour deposition, using hfacCu(I)TMVS and argon carrier gas. The effects of the deposition temperature on the growth of copper films were investigated by observing the surface morphology and the cross sectional morphology of copper films. At the initial stage of growth, copper films tended to have the island-like growth mode, irrespective of the deposition temperatures. It was also observed that the aspect ratio(=height to width) of the islands gradually increased as the deposition temperature increased. The poorer movability of the copper atoms at the higher deposition temperature was evaluated on the basis of hindering effect by the following copper deposits.


2004 ◽  
Vol 13 (4-8) ◽  
pp. 1171-1176 ◽  
Author(s):  
S. Hofmann ◽  
B. Kleinsorge ◽  
C. Ducati ◽  
A.C. Ferrari ◽  
J. Robertson

2015 ◽  
Vol 158 ◽  
pp. 436-438 ◽  
Author(s):  
Maisara Othman ◽  
Richard Ritikos ◽  
Syed Muhammad Hafiz ◽  
Noor Hamizah Khanis ◽  
Nur Maisarah Abdul Rashid ◽  
...  

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