AbstractWe report recent development of a three-probe micromachined nanomanipulator for manipulation and in-situ characterization of nanomaterials in scanning electron microscope (SEM). The nanomanipulator consists of three independent probes having thermal bimetallic actuators and nanoscopic end-effectors. Nanoscale end-effectors with sub-100-nm spacing are created using focused ion beam (FIB) milling to directly interface with nanoscopic objects (e.g., nanotubes, nanowires). Handling of individual carbon nanotubes (CNTs) was successfully realized with the nanomanipulator in an SEM.
Abstract
On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).
Abstract
Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.
Coordinated isotopic and mineralogic analyses of planetary materials enabled by in situ lift-out with a focused ion beam scanning electron microscope