Recurrence formula for the conductivity of disordered systems in a magnetic field

1993 ◽  
Vol 182 (1) ◽  
pp. 157-160 ◽  
Author(s):  
Asya S. Skal
Keyword(s):  
Magnetic Field ◽  
Disordered Systems ◽  
Recurrence Formula

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

Review lecture: Metal–insulator transitions

1982 ◽  
Vol 382 (1782) ◽  
pp. 1-24 ◽  
Keyword(s):  
Magnetic Field ◽  
Gate Voltage ◽  
Disordered Systems ◽  
Mixed Valence ◽  
Impurity Band ◽  
Donor Concentration ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
First Order ◽  
Or Gate

A survey is given of a variety of solids that show a metal–insulator transition. In crystals most transitions are expected to be of first order as the composition or temperature is changed; in disordered systems this is not necessarily the case. The transition in an impurity band with change of donor concentration is described, and also with change of stress, magnetic field or gate voltage. The concept of a minimum metallic conductivity is discussed, with special reference to materials of mixed valence.

RECURRENCE FORMULA FOR THERMOCURRENT OF DISORDERED SYSTEMS

1994 ◽  
Vol 08 (17) ◽  
pp. 1045-1048 ◽  
Author(s):  
ASYA S. SKAL
Keyword(s):  
Electric Field ◽  
Seebeck Coefficient ◽  
Disordered Systems ◽  
Recurrence Formula ◽  
Inhomogeneous Material ◽  
Local Temperature ◽  
Local Value

A recurrence formula for thermocurrent of macroscopically inhomogeneous material in sequence for α is obtained. <jk(r)> = E−1ʃα(r)(j0(r) · ∇Tk−1(r))dV, where α(r) is a local value of Seebeck coefficient, E is the electric field, and T(r) is a local temperature. This formula gives the contributions of all orders of Seebeck coefficient in thermocurrent.

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