Two-dimensional analysis of surface recombination at the extrinsic base surface under various conditions in heterojunction bipolar transistors

1995 ◽  
Vol 38 (3) ◽  
pp. 633-639 ◽  
Author(s):  
Chang-Woo Kim ◽  
Norio Goto ◽  
Kazuhiko Honjo
Keyword(s):  
Dimensional Analysis ◽  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Two Dimensional ◽  
Base Surface ◽  
Extrinsic Base

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors

2007 ◽  
Vol 90 (4) ◽  
pp. 043510 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Kuei-Yi Chu ◽  
Li-Yang Chen ◽  
Lu-Ann Chen ◽  
Chun-You Chen
Keyword(s):  
Dimensional Analysis ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Two Dimensional

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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