Uniaxial stress dependence of time-resolved electronic raman scattering in germanium

1996 ◽  
Vol 33 (1-3) ◽  
pp. 121-124
Author(s):  
Hideyuki Ohtake ◽  
Koichiro Tanaka ◽  
Takeyo Tsukamoto ◽  
Tohru Suemoto
Keyword(s):  
Raman Scattering ◽  
Uniaxial Stress ◽  
Stress Dependence ◽  
Time Resolved ◽  
Electronic Raman Scattering

SPATIAL AND MOMENTUM DIFFUSION OF ENERGETIC HOLES IN InAs BY TWO COLOR PUMP-PROBE METHOD

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3932-3935
Author(s):  
SHINGO SAITO ◽  
TOHRU SUEMOTO
Keyword(s):  
Raman Scattering ◽  
Second Harmonic ◽  
Harmonic Excitation ◽  
Probe Method ◽  
Raman Intensity ◽  
Time Resolved ◽  
Pump Probe ◽  
Electronic Raman Scattering ◽  
Hole Band ◽  
Scattering Measurement

Time-resolved electronic Raman scattering of a direct-gap semiconductor, InAs was measured by pump-probe method. We used fundamental pulses and second harmonic pulses of mode-locked Ti:S laser as excitation sources, and fundamental pulses as the probe beam. The time-resolved Raman intensities corresponding to the transition from heavy hole band to light hole band showed different features depending on the excitation energy. In case of the fundamental beam excitation, Raman intensity decreased monotonously. On the contrary, Raman intensity under the second harmonic excitation showed a maximum at a few picosecond after excitation. From the analysis, the temperature of photo-excited hole changed from 5300K to 1300K in 2psec and from 1300K to RT within 4 psec under the second harmonics excitation. It has been shown that the time-resolved Raman scattering measurement is a useful tool to investigate dynamics of the energetic carriers.

Optical Characterization of SiC Wafers

1999 ◽  
Vol 572 ◽  
Author(s):  
J. C. Burton ◽  
M. Pophristic ◽  
F. H. Long ◽  
I. Ferguson
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Laser Wavelength ◽  
Time Resolved ◽  
Near Ir ◽  
Electronic Raman Scattering ◽  
Defect Levels ◽  
Sic Wafer ◽  
Time Resolved Photoluminescence

ABSTRACTRaman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. We have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. We have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. We also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

scholarly journals Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube

2020 ◽  
Vol 11 (24) ◽  
pp. 10497-10503
Author(s):  
Yuecong Hu ◽  
Shaochuang Chen ◽  
Xin Cong ◽  
Sida Sun ◽  
Jiang-bin Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Raman Scattering ◽  
Electronic Raman Scattering

Electronic Raman scattering in

1986 ◽  
Vol 126 ◽  
pp. 302 ◽  
Author(s):  
G.M. Williams ◽  
P.C. Becker ◽  
J.G. Conway ◽  
N. Edelstein ◽  
M.M. Abraham ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Electronic Raman Scattering

scholarly journals Observation of Electronic Raman Scattering in Metallic Carbon Nanotubes

2011 ◽  
Vol 107 (15) ◽  
Author(s):  
H. Farhat ◽  
S. Berciaud ◽  
M. Kalbac ◽  
R. Saito ◽  
T. F. Heinz ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Raman Scattering ◽  
Electronic Raman Scattering
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