AbstractFerroelectrics such as PbTiO3 and BaSrTiO3 are promising candidates for pyroelectric infrared detector materials. Integration of ferroelectric thin films on Si will permit fabrication of low-cost infrared detector arrays, but a buffer layer will be required to reduce interactions with the substrate. For this reason we have investigated MOCVD of MgAl2O4 and yttria-stabilized zirconia (YSZ) buffer layers on both Si and MgO. A single source molecule, magnesium dialuminum isopropoxide (Mg[Al(OCH(CH3)2)4]2), was used for deposition of the MgAl2O4, the first time to our knowledge that well characterized multi-metal oxide films have been deposited by CVD from a single-source compound. Both EDAX and RBS showed film stoichiometries consistent with the elemental ratio in the source. A novel liquid solution-based flash vaporization technique was used to transport the organometallic sources into the reactor, providing both excellent reproducibility and ease of stoichiometry control and deposition rate. Highly oriented [100] MgAl2O4 was grown on MgO, and [100] YSZ was grown on MgO and Si. Degree of preferred orientation of the YSZ was found to be dependent on oxygen partial pressure, both for the MgO and Si substrates.
