A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

SUPERLATTICE MATERIALS FOR THE NEXT GENERATION OF LONG WAVELENGTH INFRARED DETECTORS

2000 ◽  
Vol 10 (01) ◽  
pp. 47-53
Author(s):  
G. J. BROWN ◽  
F. SZMULOWICZ ◽  
K. MAHALINGAM ◽  
A. SAXLER ◽  
R. LINVILLE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Infrared Imaging ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Next Generation ◽  
Ir Detector ◽  
Detector Arrays ◽  
Long Wavelength ◽  
Detector Materials ◽  
Long Wavelength Infrared

New infrared (IR) detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous space-based infrared imaging applications. To meet these stringent requirements, new materials must be designed and grown using semiconductor heterostructures, such as quantum wells and superlattices, to tailor new optical and electrical properties unavailable in the current generation of materials. One of the most promising materials is a strained layer supperlattice (SLS) composed of thin InAs and GaInSb layers. While this material shows theoretical and early experimental promise, there are still several materials growth and processing issues to be addressed before this material can be transitioned to the next generation of infrared detector arrays. Our research is focused on addressing the basic materials design, growth, optical properties, and electronic transport issue of these superlattices.

A comparison of indium arsenide antimonide and mercury cadmium telluride as long wavelength infrared detector materials

2020 ◽  
Vol 128 (7) ◽  
pp. 075704
Author(s):  
Anthony J. Ciani ◽  
Christoph H. Grein ◽  
Wendy L. Sarney ◽  
Stefan P. Svensson ◽  
Dmitri V. Donetski ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Indium Arsenide ◽  
Mercury Cadmium Telluride ◽  
Infrared Detector ◽  
Long Wavelength ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Indium Arsenide Antimonide

Characterization of Matrix-Assisted Laser Desorption Based on Absorption and Acoustic Monitoring

1995 ◽  
Vol 49 (12) ◽  
pp. 1826-1833 ◽  
Author(s):  
Jan Preisler ◽  
Edward S. Yeung
Keyword(s):  
Atmospheric Pressure ◽  
Accurate Determination ◽  
Optimal Conditions ◽  
Plume Velocity ◽  
Ion Laser ◽  
Optical Probing ◽  
Argon Ion ◽  
Reduced Pressures

Conventional methods for studying matrix-assisted desorption-ionization rely on mass spectroscopy. In this study, a 488-nm argon-ion laser beam is deflected by two acoustooptic deflectors to image plumes desorbed at atmospheric pressure via absorption. All species, including neutral molecules, are monitored. Interesting features, e.g., differences between the initial plume and subsequent plumes desorbed from the same spot, or the formation of two plumes from one laser shot, are observed. Total plume absorbance can be correlated with the acoustic signal generated by the desorption event. A model equation for the plume velocity as a function of time is proposed. Optical probing also enables accurate determination of plume velocities at reduced pressures. These results define the optimal conditions for desorbing analytes from matrices, as opposed to achieving a compromise between efficient desorption and efficient ionization as is practiced in mass spectrometry.

Development of long-wavelength infrared detector and its space-based application requirements

2019 ◽  
Vol 28 (2) ◽  
pp. 028504 ◽  
Author(s):  
Junku Liu ◽  
Lin Xiao ◽  
Yang Liu ◽  
Longfei Cao ◽  
Zhengkun Shen
Keyword(s):  
Infrared Detector ◽  
Long Wavelength ◽  
Application Requirements ◽  
Long Wavelength Infrared

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

Infrared photoluminescence characterization of long-wavelength HgCdTe detector materials

1993 ◽  
Vol 8 (6S) ◽  
pp. 941-945 ◽  
Author(s):  
S R Kurtz ◽  
J Bajaj ◽  
D D Edwall ◽  
S J C Irvine
Keyword(s):  
Long Wavelength ◽  
Detector Materials ◽  
Hgcdte Detector

Photoacoustic characterization of cw argon‐ion laser irradiation of Ge

1979 ◽  
Vol 35 (2) ◽  
pp. 121-124 ◽  
Author(s):  
J. F. McClelland ◽  
R. N. Kniseley
Keyword(s):  
Laser Irradiation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
Sign in / Sign up

Export Citation Format

Share Document